Obtenção e caracterização de filmes finos de oxido, nitreto e oxinitreto de silicio por deposição ECR-CVD / Synthesis and characterization of oxide nitride and silicon oxynitride thin films by ECR-CVD

AUTOR(ES)
DATA DE PUBLICAÇÃO

2005

RESUMO

In this work, silicon nitride (SixNy), oxide (SiOx) and oxynitride (SiOxNy) thin films obtained by remote plasma chemical vapor deposition (RPCVD) on silicon substrate were studied and characterized for micromachining or micro electro-mechanical system (MEMS) applications. Silicon nitride films (SixNy) were used in suspended structures (membranes and bridges) and as MOS device protection mask against wet substrate etching, obtained by wet substrate etching processes using the front-side and back-side bulk micromachining techniques, respectively. Silicon oxide films (SiOx) were employed as sacrificial layers to obtain suspended surface structures using the surface micromachining technique. Silicon oxynitride (SiOxNy) films were used as alternative films in suspended structures (membranes and bridges), using the front-side bulk micromachining technique. The fabrication of these structures is primordial for the micro sensor and actuator development. In these work, CVD (Chemical Vapor Deposition) techniques are revised, presenting the choice justification of ECR (Electron Cyclotron Resonance) reactor, which uses RPCVD technology for the depositions

ASSUNTO(S)

silicon oxynitride eletromechanical devices mems deposição quimica de vapor silicio dispositivos eletromecanicos filmes finos silicon oxide nitreto de silicio silicon nitride cvd (chemical vapor deposition) thin films

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