Tecnologia LOCOS utilizando nitretos de silicio depositados por ECR-CVD / LOCOS technology using silicon nitride deposited by ECR-CVD

AUTOR(ES)

Marcus Anibal Pereira

DATA DE PUBLICAÇÃO

2005

RESUMO

Silicon nitride (SiNx) insulators for LOCOS applications have been deposited by RP/RTCVD and ECR-CVD at room temperature, at low pressure (5mTorr), with N2 flows of 2.5, 5, 10 and 20sccm with fixed SiH4/Ar flows of 200/20sccm with a microwave power of 1000W on SiO2-Pad/Si and Si substrates. SiNx/Si structures were obtained to analyze the physical characteristics of silicon nitride. Fourier transform infrared (FTIR) spectrometry analyses revealed the main peak position shifts of Si-N, N-H and Si-N (stretching mode) bonds for each silicon nitride films, which is related to N2 flows in gas mixture. The refractive indexes between 1.88 and 2.48 and the thickness between 120nm and 139nm were determined by ellipsometry. With these thickness values and with buffered HF etching times, it was also determined the deposition rates of 9,6 - 11,1nm/min and etch rates of 2 -86nm/min. On the SiNx(110 -215nm)/SiO2-Pad(0 - 124nm)/Si and SiNx/Si (without pad oxide) structures, the LOCOS process, with sequential photolithography and thermal wet oxidation steps, was performed. Optical and scanning electron microscopy (SEM) analysis were used to investigate the silicon nitride to thermal oxidation accomplishement at high temperature of 1000 ºC, and bird`s beak in the obtained LOCOS structures. On both structures (with and without pad oxide), the smallest lateral extension of the field oxide (bird s beak) was observed for the nitride films obtained with N2 flows of 10sccm (N10). The lengths of the bird`s beak, in the obtained LOCOS structure, have resulted between 330nm and 2160nm.

ASSUNTO(S)

microelectronics deposição quimica de vapor nitreto de silicio silicon nitride microeletronica isolation technology filmes finos cmos processos de fabricação oxido de silicio locos semicondutores complementares de oxido metalico ecr-cvd

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