Silicon Oxynitride
Mostrando 1-12 de 12 artigos, teses e dissertações.
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1. Study of indium nitride and indium oxynitride band gaps
This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetro
Mat. Res.. Publicado em: 07/05/2013
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2. Estudo de viabilidade de integração de micro-lâmpadas incandescentes com filtros interferenciais. / Study of viability of integration of incandescent micro-lamps with interferometric filters.
In the present work was realized a study of the viability of integrating two optical devices: incandescent micro-lamps and interferometric filters with the intention of obtaining a single device with specific characteristics. The fabrication of these optical devices was made using dielectric materials, obtained by plasma-enhanced chemical vapor deposition (P
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/04/2011
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3. Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos. / Development of a manufacturing methodology for organic thin film transistors.
In this work, it is presented a methodology for organic thin-film transistor (OTFT) fabrication. Poly(3-hexylthyophene) (P3HT):[6,6]-phenyl-C61-butyric acidmethyl ester (PCBM) bulk heterojunction solar cells were studied for their maximum power conversion efficiency (PCE) around 5 %. Efficiencies evolution in time from 10-6 to 1.7 % show the difficulties inv
Publicado em: 2010
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4. Estudo das propriedades estruturais e ópticas em materiais nanoestruturados a base de silício. / Study of structural and optical properties in nanostructured silicon based films.
The aim of this doctorate thesis is to enhance the knowledge in the research conducted along the Master degree based on the characterization and study of the structural and luminescent properties of silicon rich silicon oxynitride films (SiOxNy:H) deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD). The results of this study ind
Publicado em: 2009
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5. Thermo-mechanical properties of a-SiC:H and SiOxNy thin films and development of MEMS. / Propriedades termo-mecânicas de filmes finos de a-SiC:H e SiOxNy e desenvolvimento de MEMS.
O presente trabalho, realizado junto ao Grupo de Novos Materiais e Dispositivos (GNMD), no Laboratório de Microeletrônica do Departamento de Sistemas Eletrônicos da Escola Politécnica da USP, visou determinar algumas das propriedades termo-mecânicas de materiais depositados pela técnica de plasma enhanced chemical vapor deposition (PECVD) que são impo
Publicado em: 2008
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6. Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD. / Morphological and structural studies of silicon oxynitride films (SiOxNy) obtained by PECVD technique.
Neste trabalho são apresentados resultados da caracterização estrutural e morfológica de filmes de oxinitreto de silício (SiOxNy) depositados pela técnica de deposição química a vapor assistida por plasma (PECVD) a baixa temperatura (320°C). O objetivo deste trabalho é relacionar a composição química de ligas amorfas de SiOxNy com suas propried
Publicado em: 2007
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7. Estudo de camadas dielétricas para aplicação em capacitores MOS. / Study of dielectric layers for MOS capacitors.
Silicon oxynitride films obtained by the PECVD technique from N2O+SiH4+He gaseous mixtures, at 320°C, with different deposition pressure and RF power were studied intending to improve the interface quality with Si, decreasing the effective charge density and the interface state density in order to utilize them in MOS semiconductor devices. The results showe
Publicado em: 2007
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8. Obtenção e caracterização de filmes finos de oxido, nitreto e oxinitreto de silicio por deposição ECR-CVD / Synthesis and characterization of oxide nitride and silicon oxynitride thin films by ECR-CVD
In this work, silicon nitride (SixNy), oxide (SiOx) and oxynitride (SiOxNy) thin films obtained by remote plasma chemical vapor deposition (RPCVD) on silicon substrate were studied and characterized for micromachining or micro electro-mechanical system (MEMS) applications. Silicon nitride films (SixNy) were used in suspended structures (membranes and bridges
Publicado em: 2005
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9. Study and fabrication of MOS capacitor with PECVD SiOxNy. / Estudo e fabricação de capacitores MOS com camada isolante de SiOxNy depositada por PECVD.
Neste trabalho foram fabricados e caracterizados capacitores MOS com camada dielétrica de oxinitreto de silício de diferentes composição química, depositada pela técnica de PECVD a baixa temperatura, com o intuito de estudar suas propriedades dielétricas e de interface visando à aplicação deste material em dispositivos MOS e de filme fino. Os capac
Publicado em: 2003
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10. Proposta de método para caracterização de propriedades termomecânicas de filmes finos utilizando dispositivos MEMS. / Proposition of thin films thermomechanical characterization using MEMS devices.
An important factor to develop microsystems is knowledge of materials properties and failure mechanisms. This research studies the thermal actuated microbeam mechanical behavior and propose a method in order to characterize thermomechanical properties of thin films. Silicon Oxynitride microbeams are fabricated and Nomarski microscopy was applied to observe s
Publicado em: 2002
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11. Synthesis of Zr-Si-O-N phases by carbonitriding reaction. Characterization of crystalline phases using the Rietveld method
Zirconium compounds are of great interest for ceramic application due to their excellent thermal and mechanical properties. Zirconium phases of the system Zr-O-C-N were obtained using carbonitriding reactions of zircon mineral (ZrO2.SiO2), under different reaction conditions. The reaction products were studied by X-ray diffraction (XRD) using the Rietveld me
Materials Research. Publicado em: 2001
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12. Obtenção e caracterização de filmes finos e ultra-finos de oxido e oxinitreto de silicio em sistema "home-made" de plasma remoto
This work describes the formation and the characterization of thin and ultra-thin silicon oxide (SiO2) and oxynitride (SiOxNy) films formed by a home-made low temperature remote plasma system (RP). In this system, a 6O0W, 2.45GHz microwave generator, allows the formation of films by deposition (RPCVD) and oxidation (RPO) processes. The films were characteriz
Publicado em: 1999