Transistors
Mostrando 13-24 de 90 artigos, teses e dissertações.
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13. Sensores e biossensores baseados em transistores de efeito de campo utilizando filmes automontados nanoestruturados / Sensors and biosensors based on field-effect transistors using nanostructured self-assembled films
Separative extended gate field-effect transistor (SEGFET) device is an alternative to the conventional ion-sensitive field-effect transistor (ISFET). The great advantage of SEGFET refers to its easy processing, i.e., it is limited under only manipulation of the gate electrode, avoiding the conventional microelectronic processes. In this way, ion sensors and
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 21/11/2011
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14. Influência do Crescimento Epitaxial Seletivo (SEG) em transistores SOI de porta tripla de canal N tensionado. / Influence of Selective Epitaxial Growth (SEG) in strained SOI triple gate N transistors.
Este trabalho apresenta um estudo da influência do crescimento epitaxial seletivo (SEG) em dispositivos tensionados mecanicamente (strain) em transistores SOI MuGFET de porta tripla. Com a evolução da tecnologia de integração de transistores, alguns efeitos parasitários são eliminados ou diminuídos, porém outros novos surgem. A tecnologia SOI MuGFET
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/05/2011
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15. Threshold shifting of nmos transitions by arsenic ion implantation prior to gate oxidation
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in the channel region directly into bare silicon just before the gate oxidation. Experimental results showed very good uniformity and reproducibility of the threshold voltages, low body effect, and high mobility values.
Publicado em: 2011
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16. Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters
Publicado em: 2011
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17. A novel voltage-mode CMOS quaternary logic design
This brief presents a novel kind of voltage-mode CMOS design that uses multiple threshold voltage transistors and three power supply lines to implement quaternary logic gates, showing lower power dissipation and using less area than the present voltage-mode quaternary circuits. Inverter, NMIN, and NMAX gates are simulated with the Spice tool using TSMC 0.18-
Publicado em: 2011
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18. A compact model of MOSFET mismatch for circuit design
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the satu
Publicado em: 2011
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19. Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior
Publicado em: 2011
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20. Tbulk-BICS : a Built-in current sensor robust to process and temperature variations for soft error detection
This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor compensating process and temperature variations. By choosing different configurations in the trimming bits, it is possible to adjust the p
Publicado em: 2011
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21. Modeling and simulation of device variability and reliability at the electrical level
In nanometer scale complementary metal-oxide-semiconductor (CMOS) parameter variations pose a challenge for the design of high yield integrated circuits. This work presents models that were developed to represent physical variations affecting Deep- Submicron (DSM) transistors and computationally efficient methodologies for simulating these devices using Elec
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 2011
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22. Polyol-polyesther matrices containing phthalocyanine derivatives macrocilces / Derivados de ftalocianina em sistemas poliméricos poliéster-poliol
Phthalocyanines are planar macrocycles with the presence of a central metal ion, formed by bridges of nitrogen and substituent groups in the aromatic rings adjacents. A large number of (PI) electrons, molecular symmetry and the possibility to coordinate different metals in nitrogen central atoms allows the use of these compounds in optical devices, light emi
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 06/05/2010
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23. Desenvolvimento de sistemas e medida de ruído de alta e baixa frequência em dispositivos semicondutores / System for high and low frequency noise measurements design and semiconductor devices characterization
Este trabalho teve como objetivo a montagem de um sistema de caracterização de ruído de alta e de baixa freqüência, utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da Unicamp. Foi montado um sistema para a caracterização do ruído de baixa freqüência em dispositivos semicondutores e desenvolveu-se um método para a anál
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 24/02/2010
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24. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobili
Brazilian Journal of Physics. Publicado em: 2010-09