Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

AUTOR(ES)

Sarma, R., Saikia, D., Saikia, Puja, Saikia, P.K., Baishya, B.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2010-09

RESUMO

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.

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