A compact model of MOSFET mismatch for circuit design
AUTOR(ES)
Montoro, Carlos Galup
DATA DE PUBLICAÇÃO
2011
RESUMO
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 m technology confirm the accuracy of our mismatch model under various bias conditions.
ASSUNTO(S)
mosfet circuitos eletrônicos analog design microeletronica matching mismatch compact models
ACESSO AO ARTIGO
http://hdl.handle.net/10183/27580Documentos Relacionados
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