Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs
AUTOR(ES)
Wirth, Gilson Inacio
DATA DE PUBLICAÇÃO
2011
RESUMO
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.
ASSUNTO(S)
analog circuits microeletronica low-frequency noise (lf-noise) mos transistors noise modeling rf circuits semiconductor device noise
ACESSO AO ARTIGO
http://hdl.handle.net/10183/27600Documentos Relacionados
- Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs
- Oxymetry deep in tissues with low-frequency electron paramagnetic resonance.
- Seismology and geodesy of the sun: Low-frequency oscillations
- Low-frequency fatigue at maximal and submaximal muscle contractions
- Low-frequency fatigue at maximal and submaximal muscle contractions