Schottky Barrier
Mostrando 1-12 de 14 artigos, teses e dissertações.
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1. PHOTODEGRADATION OF RhB UNDER VISIBLE LIGHT BY PT/TIO2 NANOPARTICLES PREPARED THROUGH PHOTOREDUCTIVE DEPOSITION PROCESS
Pt/TiO2 nanoparticles were prepared by a simple two-step aqueous solution method, which consists of a low temperature hydrothermal step and a photoreduction deposition step. The as-prepared samples were characterized by XRD, TEM, XPS, UV-vis, and BET techniques. The as-prepared samples exhibited enhanced photocatalytic activity towards the degradation of rho
Quím. Nova. Publicado em: 2021-03
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2. CARACTERIZAÇÃO DE NANOFIOS DE GERMÂNIO SINTETIZADOS UTILIZANDO COBRE COMO CATALISADOR
This paper presents reliable synthesis of germanium nanowires by the vapor-liquid-solid method using copper as an alternative catalyst to gold, the most commonly used metal. The morphological study showed long range single-crystalline germanium nanowires with diamond structure and diameters ranging from 20 nm to 80 nm and lengths in tenths of a micrometer
Quím. Nova. Publicado em: 2015-07
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3. Fabricação e caracterização de dispositivos baseados em nanofitas de Óxido de Estanho (SnO2)
The structural and transport features of tin oxide nanobelts synthesized by the vapor-solid method combined with the carbothermal reduction process were investigated in this work. The samples synthesized were characterized by using experimental techniques such as scanning and transmission electron microscopy and x-ray diffraction. The nanobelts were found to
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 06/08/2012
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4. Desenvolvimento de processos de eletrodos de porta (TaN e TiN) para dispositivos MOS / Process development of gate electrodes (TiN and TaN) for MOS devices
Tantalum nitride (TaN) and titanium nitride (TiN) films have been obtained by DC sputtering, using different nitrogen flow (10 - 80 sccm) and power (500 - 1500 W), in a nitrogen (N2)/argon (Ar) ambient on Si (100) substrates. The N2/Ar ratio in gas mixture and power effects on structural and electrical properties of TaN and TiN films were investigated by sca
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 01/07/2011
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5. Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al / Construction and caracterization of Schottky barrier solar cells CdTe/Al
In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in order to manufacture a prototype solar cell type Schottky barrier. The films were produced by evaporation of a solid alloy of CdTe, varying two parameters of deposition: the growth time and substrate temperature. In th
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 30/05/2011
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6. Electrical transport phenomenon in the lead bismuth borate glasses
Ternary system of lead-bismuth-borate glasses has been fabricated in three different compositions (PbO)x% - (Bi2O3)(50-x)% - (B2O3)50% with x = 5, 15 and 25 using the melt quench technique. The D.C. electrical transport mechanism has been discussed both in the low and high field regions. The coefficients of barrier lowering are calculated based on the Schott
Brazilian Journal of Physics. Publicado em: 2009-06
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7. The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range
The current-voltage (I-V) characteristics of metal-insulator-semiconductor (Al/GaN/p-GaAs) Schottky barrier diodes (SBDs) were investigated over a wide temperature range of 80-380 K. By using the thermionic emission (TE) theory, the zero bias barrier height ΦB0 calculated from I-V characteristics was found to increase with increasing temperature as the idea
Brazilian Journal of Physics. Publicado em: 2008-12
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8. High-temperature thin-catalytic gate devices for combustion emissions control
4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450ºC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations in the Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Device parameters were evaluated from linear conductan
Brazilian Journal of Physics. Publicado em: 2004-06
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9. Efectos de la exposición a vacío y aire de películas de SnO2 con distinto espesor
Gas sensors based in semiconductor oxides show a change in the resistance when they are exposed to certain gaseous atmospheres. In this paper, the influence on the sensor electrical resistance with the film thickness in vacuum and air are studied. The conduction process is analyzed considering the existence of Schottky potential barriers at the grain boundar
Materials Research. Publicado em: 2003-12
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10. Estudo de processo de fabricação de diodo Schottky de potencia
This work is a study of fabrication process for power Schottky diode. Aluminum and Tungsten were used as metal Schottky contact. The types of fabricated Schottky diodes were: Convencional Schottky diode, with metal overlap, with p-n guard ring and with pn junction grid. Parameters from IxV and transient curves were extracted to verify the static and dinamic
Publicado em: 2003
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11. Filmes finos de WN e ALN e suas aplicações na fabricação de transitores mesfet
Tungsten Nitride (WN) and Aluminum Nitride (AlN) thin films were deposited by DC sputtering in Nitrogen ambi~nt and characterized in this work. Gallium Arsenide Schottky diodes were used in the characterization of WN films. The diodes were subject to thermal treatments to study the thermal stability of the contacts, as in the fabrication process of MESFET tr
Publicado em: 2000
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12. Deposição e caracterização de filmes finos de We WSi e estudo da estabilidade termica do contato Schottky sobre GaAs
This dissertation presents a study of the physical and electrical characteristics of W and WSi x thin films as a function of the deposition parameters, done RF magnetron sputtering. Thin films of about 200 nm thickness were deposited on GaAs and SiO/2Si substrates. The depositions were done after a base-pressure of about 6.10-7 Torr was achieved. The deposit
Publicado em: 1992