Capacitance Voltage Characteristics
Mostrando 1-12 de 15 artigos, teses e dissertações.
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1. Characterization of the Ge/Bi2O3 Interfaces
In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2
Mat. Res.. Publicado em: 04/04/2019
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2. Caracterización eléctrica de películas delgadas de Al2O3 depositadas sobre GaAs por la técnica de rocío pirolítico
Electrical characteristics of thin films of aluminum oxide prepared by spray pyrolysis were studied. The films were prepared from solution onto single crystal GaAs (100) substrates at temperatures from 300°C to 600°C. The electrical characteristics of these films as a function of the substrate temperature were determined from the capacitance and current ve
Matéria (Rio de Janeiro). Publicado em: 2008-03
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3. Isolantes de porta com altas constantes dieletricas (High K) para tecnologia MOS / High K gate insulators for MOS technology
High k insulators for the next generation (sub-32 nm CMOS (complementary metaloxide-semiconductor) technology), such as titanium oxide (TiOx), titanium oxynitride (TiOxNy), titanium-aluminum oxynitride (AlxTiwOyNz), titanium-aluminum nitride (AlxTiwNz) and titanium-aluminum oxide (AlxTiwOy), have been obtained by Ti or Ti/Al e-beam evaporation, with addition
Publicado em: 2008
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4. Caracterização de filmes finos de óxido de silício depositados em um reator HD-PECVD a partir de TEOS a ultra baixa temperatura. / Characterization of silicon dioxide thin films deposited in a HD-PECVD reactor from TEOS at ultra low temperature.
This work reports on the results obtained from high-density plasma enhanced chemical vapor deposited silicon oxide films at ultra low temperature, i.e. 30°C, using TEOS vapor as the silicon source oxidized with assistance of argon. The objectives of this work are: first, understand the phenomena that conducts the chemical vapor deposition in high density re
Publicado em: 2007
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5. Lead telluride p-n junctions for infrared detection: electrical and optical characteristics
PbTe mesa diodes were fabricated from a series of p - n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 10(17) cm-3 and the electron concentration varied between 10(17) and 10(19) cm-3. Capacitance versus voltage analysis revealed that for n > 10(18) cm-3, a one-sided abrupt junction is formed. The direct and
Brazilian Journal of Physics. Publicado em: 2006-06
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6. Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors. / Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho.
This work reports on the electrical characterization of PbTe p-n junctions for application in photovoltaic detectors in the medium infrared range. For this purpose, a series of p-n junctions, where the hole concentration p was kept at 1017 cm-3 and the electron concentration n varied between 1017 and 1019 cm-3, was successfully grown by molecular beam epitax
Publicado em: 2004
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7. Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho. / Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors.
Este trabalho visa à caracterização elétrica de junções p-n de PbTe para aplicação em detectores fotovoltaicos na faixa do infravermelho médio. Para isto, uma série de junções p-n foi crescida com sucesso por epitaxia de feixe molecular sobre substratos de fluoreto de bário. Nesta série, a concentração de buracos p ficou mantida fixa em 1017
Publicado em: 2004
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8. Capacitance-voltage characteristics of InAs dots: a simple model
An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The cal
Brazilian Journal of Physics. Publicado em: 2002-09
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9. Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C c
Brazilian Journal of Physics. Publicado em: 2002-06
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10. Estudo das características de células solares de silício monocristalino. / Study of monocrystalline silicon solar cells characteristics.
Systems of measurements were developed for the characterization of single crystal silicon solar cells. For that, the curves I x V were measured in the dark and for different intensity of illumination. Curves of spectral response and of capacitance as a function of the reciprocal of the voltage were also measured. The behavior of the cells as a function of te
Publicado em: 1983
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11. Intramembrane charge movement in frog skeletal muscle fibres. Properties of charge 2.
1. Membrane currents were measured in cut skeletal muscle fibres voltage-clamped in a double Vaseline gap in solutions that had impermeant ions substituted for Na+, K+ and Cl-. The fibres were maintained at a holding potential of 0 mV. Pulses to positive voltages elicited outward currents that were proportional to voltage at all times; these were used to est
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12. Room-temperature single-electron junction.
The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized. Langmuir-Blodgett films of cadmium arachidate were transfe