Caracterização de filmes finos de óxido de silício depositados em um reator HD-PECVD a partir de TEOS a ultra baixa temperatura. / Characterization of silicon dioxide thin films deposited in a HD-PECVD reactor from TEOS at ultra low temperature.

AUTOR(ES)

Otávio Filipe da Rocha

DATA DE PUBLICAÇÃO

2007

RESUMO

This work reports on the results obtained from high-density plasma enhanced chemical vapor deposited silicon oxide films at ultra low temperature, i.e. 30°C, using TEOS vapor as the silicon source oxidized with assistance of argon. The objectives of this work are: first, understand the phenomena that conducts the chemical vapor deposition in high density regime in order to control the deposited silicon oxide films properties, and also obtain silicon oxide films with adequate properties, from structural and electric characterization of films deposited under different process conditions, in order to control the properties of the deposited materials, for use in TFTs technology. Different analysis techniques were applied to characterize the deposited layers: ellipsometry, FTIRS, RBS, deposition and etch rate curves, capacitance versus voltage in high-frequency curves and electric current versus voltage curves. Obtained results were presented and subdivided in accordance with TEOS flow used in the deposition process: 0,5 sccm (for temperatures of 30, 150 and 250°C), 1 and 4 sccm. Characterization results were obtained by the different techniques employed suggests the adequate control of the silicon oxide films characteristics according HD-PECVD/TEOS process parameters which are: stoichiometry, density, Si-H and Si-OH bonds content, position of Si-O peak and absence of organic contamination. The main results obtained from the electric characterization MOS capacitors with area 9 x 10-4 cm-2, implemented with deposited SiOx films, are: VFB = -3,94 V; eOX = 3,92; QSS/q = 6,08×1011 cm-2; EBD = 9,44 MV/cm and JLK = 2,50×10-7 A/cm-2 @ 4 MV/cm.

ASSUNTO(S)

plasma (microeletrônica) processos de microeletrônica microelectronic processes plasma (microelectronic) thin films filmes finos

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