Lead telluride p-n junctions for infrared detection: electrical and optical characteristics
AUTOR(ES)
Barros, A. S., Abramof, E., Rappl, P. H. O.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-06
RESUMO
PbTe mesa diodes were fabricated from a series of p - n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 10(17) cm-3 and the electron concentration varied between 10(17) and 10(19) cm-3. Capacitance versus voltage analysis revealed that for n > 10(18) cm-3, a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R0A product varied between 0.23 and 31.8 omegacm², and the integral detectivity ranged from 1.1x10(8) to 6.5x10(10) cmHz½W-1. The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate.
Documentos Relacionados
- Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors.
- Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho.
- Injeção de portadores quentes numa junção P-N
- COMPENSATIONS IN ELECTRON EXCITATION EFFECTS IN p-p AND p-n SCATTERING*
- The secretory granule matrix-electrolyte interface: a homologue of the p-n rectifying junction.