Caracterización eléctrica de películas delgadas de Al2O3 depositadas sobre GaAs por la técnica de rocío pirolítico

AUTOR(ES)

Chávez-Ramírez, J., Aguilar-Frutis, M., Burillo, G., López-Romero, S., Alvarez-Fregoso, O., Falcony, C., Flores-Morales, C.

FONTE

Matéria (Rio de Janeiro)

DATA DE PUBLICAÇÃO

2008-03

RESUMO

Electrical characteristics of thin films of aluminum oxide prepared by spray pyrolysis were studied. The films were prepared from solution onto single crystal GaAs (100) substrates at temperatures from 300°C to 600°C. The electrical characteristics of these films as a function of the substrate temperature were determined from the capacitance and current versus voltage measurements of metal-oxide-semiconductor (MOS) structures incorporating them. The interface states density was of the order of 10(12) 1/eV-cm² and the films can stand electric fields higher than 5MV/cm, without observing destructive dielectric breakdown. The refractive index at 633 nm near to 1.64 was measured by ellipsometry.

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