Modificações induzidas por ions de alta energia em filmes finos de organosilicones sintetizados por PECVD / Modifications induced by high energy ions in organosilicones thin films syntesized by PECVD
AUTOR(ES)
Rogerio Valentim Gelamo
DATA DE PUBLICAÇÃO
2007
RESUMO
Thin films of polysiloxanes, polysilazanes and polycarbosilanes, synthesized by Plasma Enhanced Chemical Vapor Deposition (PECVD), were irradiated with 170 keV He + , Ne + , Ar + and Kr + ions, at 170 keV at fluences of 1x10 14 , 5 x10 14 , 1x10 15 , 5x10 15 and 1 x10 16 ions/cm -2 . The irradiation promoted significant modifications in the atomic composition, chemical structure, and consequently in the physical properties of the films. Changes in the atomic composition were examined using Rutherford back-scattering spectroscopy (RBS) and forward recoil spectroscopy (FRS). The former was used to determine the C/Si, N/Si and O/Si atomic ratios, while the H/Si ratio was measured by the latter. As a general behavior, these ratios changed with ion irradiation and the decrease in the H/Si ratio was particularly high, as hydrogen was drastically removed by ion bombardment. Oxygen was chemically incorporated into the films due to the reactions involving dangling bonds formed during irradiation, and ambient air. Regarding the chemical structure of the films, extinction and formation of new bonding groups and chemical bonds were observed as a function of the ion fluence using infrared reflection-absorption spectroscopy (IRRAS) and X-ray photoelectron spectroscopy (XPS). The volume density of the films increased significantly with irradiaton. The optical constants, determined using ultraviolet-visible spectroscopy and ellipsometry, were also affected by ion irradiation. With increasing ion fluence, the absorption coefficient and refractive index increased, and the optical gap decreased. From nanoindentation measurements. remarkable increases in surface hardness were determined. For the higher fluences, the surface hardness of the films is in the range, or even higher, of that of martensitic tool steels. Thus, ion irradiation changed the relatively soft polymer film into a high density, hard, ceramic material. It was observed that the most significant modifications occur for He+ and Ne+ ions. An explanation to this finding is offered in terms of the electronic and nuclear energy transfer functions
ASSUNTO(S)
filmes finos policarbosilanos irradiação ionica organosilicones polysilazanes polissiloxanos pecvd polysiloxanes ion irradiation organosilicones polisilazanos thin films pecvd
ACESSO AO ARTIGO
http://libdigi.unicamp.br/document/?code=vtls000412228Documentos Relacionados
- Modifications induced by high energy ions in organosilicones thin films syntesized by PECVD
- Efeito magnetocalorico em filmes finos nanocompositos sintetizados por sputtering
- Minimizing the stroin energy of thin films on thick substrates
- Implantação ionica em filmes finos depositados por PECVD
- Characterization of sol-gel thin films by ellipsometry.