Desenvolvimento de micropontas de silício com eletrodos integrados para dispositivos de emissão por efeito de campo. / Development of silicon microtips with integrated electrical contacts for field emission devices.

AUTOR(ES)

Alex de Lima Barros

DATA DE PUBLICAÇÃO

2007

RESUMO

This work presents a fabrication method of silicon microtips with integrated electrical contacts into the structure. Our motivation is the future development of field emission devices - FED, however our focus in this research is the microstructure fabrication process. This method is based on: (i) anisotropic under-etch method that occurs in the silicon substrate (100), when it is oriented in convenient crystallographic direction, using KOH solution; (ii) the employment of silicon oxinitride films (SiOxNy) which aims to mask the corrosion process during the formation of the microtips, and also to give mechanically support for the metallic tracks of their electrodes. Such material, which is obtained by Plasma Enhanced Chemical Vapour Deposition - PECVD, exhibits internal low stress and was used to obtain electric insulation between the electrodes and the Si substrate. These SiOxNy films made possible the achievement of flat and smooth selfsustained tracks, whose dimensions can reach 6 millimeters. Through conventional photolitographic techniques, we built chromium self-aligned electrical contacts on those microtips. Methodologically, we define and characterize different stages of microtips formation, by means of optical microscopy, and we determine their respective etch rates. And consequently the entire formation time in function of the initial mask dimensions. Those structures had been manufactured in the shape of matrices with 50, 98, 112 and 113 microtips which distance between each other can vary from 130 to 450 ?m. Its diameter in the microtip apex and its height are about 1 and 54 ?m respectively. The main advantage of this fabrication method is the lack of the requirement of manual external micropositioners for the integration of electrical contacts to structure itself. Finally, this method succeeds due essentially to the SiOxNy exclusive film properties.

ASSUNTO(S)

silicon microtips emissão por efeito de campo microeletrônica do vácuo vacuum microelectronics micropontas de silício materiais pecvd pecvd materials field emission

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