Pecvd Materials
Mostrando 1-12 de 12 artigos, teses e dissertações.
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1. Syntesis of Carbon Nanostructures Near Room Temperature Using Microwave PECVD
Carbon nanostructures (nanotubes, nanofibers and nanosponges) were synthesized onto Si (001) substrates using a microwave assisted plasma enhanced chemical vapor deposition (PECVD) from C2H2-Ar mixtures at low substrate temperatures (120 °C). Catalytic films (Ni and Cu) 3 nm thick were used. Different structures were formed, depending on the C2H2 partial pr
Mat. Res.. Publicado em: 2015-08
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2. Estudo de viabilidade de integração de micro-lâmpadas incandescentes com filtros interferenciais. / Study of viability of integration of incandescent micro-lamps with interferometric filters.
In the present work was realized a study of the viability of integrating two optical devices: incandescent micro-lamps and interferometric filters with the intention of obtaining a single device with specific characteristics. The fabrication of these optical devices was made using dielectric materials, obtained by plasma-enhanced chemical vapor deposition (P
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/04/2011
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3. Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos. / Development of a manufacturing methodology for organic thin film transistors.
In this work, it is presented a methodology for organic thin-film transistor (OTFT) fabrication. Poly(3-hexylthyophene) (P3HT):[6,6]-phenyl-C61-butyric acidmethyl ester (PCBM) bulk heterojunction solar cells were studied for their maximum power conversion efficiency (PCE) around 5 %. Efficiencies evolution in time from 10-6 to 1.7 % show the difficulties inv
Publicado em: 2010
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4. Estudo das propriedades estruturais e ópticas em materiais nanoestruturados a base de silício. / Study of structural and optical properties in nanostructured silicon based films.
The aim of this doctorate thesis is to enhance the knowledge in the research conducted along the Master degree based on the characterization and study of the structural and luminescent properties of silicon rich silicon oxynitride films (SiOxNy:H) deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD). The results of this study ind
Publicado em: 2009
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5. Study of the fabrication steps of an electro-thermo-optical device using Mach-Zehnder interferometer. / Estudo das etapas de fabricação de dispositivos eletro-termo-ópticos utilizando o interferômetro Mach-Zehnder.
In this work, a study of the steps to fabricate an electro-thermo-optical device is realized. This device is based in a Mach-Zehnder interferometer (IMZ) where a micro-resistor is placed in one of the IMZ arms. The Mach-Zehnder interferometer was fabricated using Anti-Resonant Reflecting Optical Waveguide (ARROW) where oxinytride and amorphous hydrogenated s
Publicado em: 2008
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6. Caracterização de filmes finos de óxido de silício depositados em um reator HD-PECVD a partir de TEOS a ultra baixa temperatura. / Characterization of silicon dioxide thin films deposited in a HD-PECVD reactor from TEOS at ultra low temperature.
This work reports on the results obtained from high-density plasma enhanced chemical vapor deposited silicon oxide films at ultra low temperature, i.e. 30°C, using TEOS vapor as the silicon source oxidized with assistance of argon. The objectives of this work are: first, understand the phenomena that conducts the chemical vapor deposition in high density re
Publicado em: 2007
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7. Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD. / Morphological and structural studies of silicon oxynitride films (SiOxNy) obtained by PECVD technique.
Neste trabalho são apresentados resultados da caracterização estrutural e morfológica de filmes de oxinitreto de silício (SiOxNy) depositados pela técnica de deposição química a vapor assistida por plasma (PECVD) a baixa temperatura (320°C). O objetivo deste trabalho é relacionar a composição química de ligas amorfas de SiOxNy com suas propried
Publicado em: 2007
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8. Desenvolvimento de micropontas de silício com eletrodos integrados para dispositivos de emissão por efeito de campo. / Development of silicon microtips with integrated electrical contacts for field emission devices.
This work presents a fabrication method of silicon microtips with integrated electrical contacts into the structure. Our motivation is the future development of field emission devices - FED, however our focus in this research is the microstructure fabrication process. This method is based on: (i) anisotropic under-etch method that occurs in the silicon subst
Publicado em: 2007
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9. Estudo de camadas dielétricas para aplicação em capacitores MOS. / Study of dielectric layers for MOS capacitors.
Silicon oxynitride films obtained by the PECVD technique from N2O+SiH4+He gaseous mixtures, at 320°C, with different deposition pressure and RF power were studied intending to improve the interface quality with Si, decreasing the effective charge density and the interface state density in order to utilize them in MOS semiconductor devices. The results showe
Publicado em: 2007
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10. Gravação e caracterização de nanoestruturas bidimensionais em relevo
This thesis describes the recording of two dimensional surface-relief nano structures, using double holographic exposures and lithography. The experimental conditions for recording photoresist masks are described, as well as for the lithography of the two dimensional pattern in three different materials: aluminum, nickel and hydrogenated amorphous carbon. Fo
Publicado em: 2003
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11. Polymer Production by Plasma Polymerization of Oxygenated Organic Compounds
This work was aimed at producing new polymeric materials using oxygenated organic compounds as main reactants and plasma enhanced chemical vapor deposition (PECVD) as a production technique. The films obtained were analyzed by profilometry, in order to determine the deposition rate, by Infrared Spectroscopy (FTIR) to identify the species deposited and by con
Polímeros. Publicado em: 2002-10
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12. Análise das propriedades químicas, morfológicas e estruturais de filmes finos de a-Si1-xCx:H depositados por PECVD. / Analysis of the chemical, morphological and structural properties of a-Si1-xCx:H thin films deposited by PECVD.
In this work we discuss the growth and characterization of amorphous hydrogenated silicon carbide thin films (a-Si1-xCx:H) deposited by plasma enhanced chemical vapor deposition (PECVD). It was used a gaseous mixture of silane, methane and hydrogen, at the silane starving plasma regime. Samples grown at these conditions and with a very low silane flow have a
Publicado em: 2001