Transistors
Mostrando 1-12 de 90 artigos, teses e dissertações.
-
1. Characterization of the Ge/Bi2O3 Interfaces
In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2
Mat. Res.. Publicado em: 04/04/2019
-
2. An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications
Abstract This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of th
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2019-03
-
3. New methodology for modeling, design and implementation of RF power amplifiers
Abstract This work presents a new methodology for modeling, design and implementation of power amplifiers in different technologies. As result of comparison, a flowchart with a new methodology is proposed which can be useful for the designer to design and implement power amplifiers with low, medium and high power devices in different technologies. This paper
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2017-09
-
4. Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors
We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (µFET) of 0.18 cm2V-1s-1.
Mat. Res.. Publicado em: 19/09/2016
-
5. Effects of Measurements Conditions on an Extended-Gate FET used as pH sensor
Fluorine-doped tin oxide (SnO2:F) was investigate as the sensitive part of a pH sensor in the extended-gate field effect transistors (EGFET) device, which provided a linear response for pH range from 2 to 12; the sensitivity was 37 mV.pH-1 for experiments performed in absence of light. Neutral pH, leads to a transistor’s electric current remained practical
Mat. Res.. Publicado em: 05/02/2016
-
6. Nanoelectronic Devices Based on Carbon Nanotubes
ABSTRACT: Carbon nanotubes are possible building blocks in the development of new generation of electronic devices. The carbon nanotubes allow one fabrication of devices using nanometric scales. They can be used in projects of a wide range of electronic and optoelectronic components such as diodes, transistors and interconnection elements, among others. This
J. Aerosp. Technol. Manag.. Publicado em: 2015-03
-
7. Fabricação e estudo das propriedades de transporte de transistores de filmes finos orgânicos / Manufacturing and study of charge transport properties of organic thin film transistors
A eletrônica digital desempenha papel essencial no desenvolvimento e manutenção dos padrões de vida em prática hoje no mundo. A peça fundamental para a criação desta era tecnológica é sem dúvidas o transistor. Com o advento de novos materiais, a busca por transistores que oferecem novas oportunidades de processamento e aplicação permitiu que uma
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/10/2012
-
8. Aplicações de corrosão por plasma usando reatores ICP e RIE para tecnologia MEMS / Plasma etching applications using ICP and RIE reactors for MEMS technology
This thesis is based on etching processes applications in cold plasmas (room temperature) using RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma), as reactors, applied to specific areas of microelectronics and MEMS devices in semiconductors industries and laboratories. Five applications are presented: Thinning gate CMOS Transistor - conventiona
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 28/08/2012
-
9. Aplicação de novos materiais em transistores de efeito de campo ferroelétricos
In this work, we investigated the electrical properties of the polyelectrolyte PSS in its sodium form (PSS-Na, Polystyrene sulfonic in the sodium form) and acid form (PSS-H, polystyrene sulfonic in the acid form) and also doped with Fe3+ for application in Ferroelectric Field Effect Transistors (Fe-FET). The PSS-Na was acquired from Aldrich and PSS-H was obt
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/07/2012
-
10. Desenvolvimento de materiais e métodos de fabricação de sensores químicos/bioquímicos baseados em silício e nanoestruturas de carbono (ISFET, CNTFET e GraFET) : Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET) / Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET)
Este trabalho teve como objetivo o desenvolvimento de materiais e métodos avançados de fabricação de sensores químicos/bioquímicos. Utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da UNICAMP, foram desenvolvidos e caracterizados filmes finos de alta constante dielétrica e filmes metálicos. Os materiais desenvolvidos foram
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 20/07/2012
-
11. Estudo de transistores de tunelamento controlados por efeito de campo. / Study of tunnel field effect transistors.
This works presents the study of tunneling field effect transistors, namely TFETs. Analyses were performed based on theoretical explanations, numerical simulations and experimental data in order to show this technology suitability as an alternative for the continuous devices scaling. The basic idea of making use of band-to-band tunneling as the main current
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/03/2012
-
12. Projeto de amplificadores com realimentação em corrente utilizando tecnologia 0,35 µm CMOS / Current-Feedback Amplifiers Design using 0,35 µm CMOS Technologie
Este trabalho apresenta o estudo aprofundado e a confecção de amplificadores realimentados por corrente (CFA). São analisadas as principais características de um CFA e comparado com o amplificador realimentado por tensão (VOA). Buscou-se esclarecer as aplicações nas quais a primeira célula apresenta-se como melhor alternativa e como importante ferram
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 12/12/2011