Estudo de transistores de tunelamento controlados por efeito de campo. / Study of tunnel field effect transistors.

AUTOR(ES)

Márcio Dalla Valle Martino

FONTE

IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia

DATA DE PUBLICAÇÃO

26/03/2012

RESUMO

This works presents the study of tunneling field effect transistors, namely TFETs. Analyses were performed based on theoretical explanations, numerical simulations and experimental data in order to show this technology suitability as an alternative for the continuous devices scaling. The basic idea of making use of band-to-band tunneling as the main current component comes from the possibility of reaching sub-60 mV/decade subthreshold slopes at room temperature, differently from conventional CMOS devices. After all, this physical limitation causes relevant power dissipation issues, since it requires relatively high power supply voltages. Bearing this objective, numerical simulations of several alternative geometries were performed in order to tackle TFETs disadvantages, as the undesirable ambipolar currents and the low ION/IOFF ratio. At first, it was necessary to choose the most appropriate models to take into consideration the relevant phenomena under temperature variation and to define the physical structure in order to minimize ambipolar effects. After these analyses, experimental data were used to calibrate simulation parameters and to study how temperature and physical dimensions affect the performance of devices based on this technology. Comparing experimental and simulated results, it was possible to notice that when the structure is designed with gate underlap related to channel/drain junction and the temperature decreases, the obtained values for subthreshold slope and ION/IOFF ratio may be used as an important reference of this technology as a promising alternative for both digital and analog applications.

ASSUNTO(S)

finfet finfet ambipolaridade ambipolarity band-to-band tunneling impacto da temperatura inclinação de sublimiar subthreshold slope temperature impact tfet tfet tunelamento de banda para banda

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