Schottky Barrier Diodes
Mostrando 1-6 de 6 artigos, teses e dissertações.
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1. Desenvolvimento de processos de eletrodos de porta (TaN e TiN) para dispositivos MOS / Process development of gate electrodes (TiN and TaN) for MOS devices
Tantalum nitride (TaN) and titanium nitride (TiN) films have been obtained by DC sputtering, using different nitrogen flow (10 - 80 sccm) and power (500 - 1500 W), in a nitrogen (N2)/argon (Ar) ambient on Si (100) substrates. The N2/Ar ratio in gas mixture and power effects on structural and electrical properties of TaN and TiN films were investigated by sca
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 01/07/2011
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2. The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range
The current-voltage (I-V) characteristics of metal-insulator-semiconductor (Al/GaN/p-GaAs) Schottky barrier diodes (SBDs) were investigated over a wide temperature range of 80-380 K. By using the thermionic emission (TE) theory, the zero bias barrier height ΦB0 calculated from I-V characteristics was found to increase with increasing temperature as the idea
Brazilian Journal of Physics. Publicado em: 2008-12
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3. High-temperature thin-catalytic gate devices for combustion emissions control
4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450ºC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variations in the Schottky barrier height. For NO gas, the response follows a simple Langmuir adsorption model. Device parameters were evaluated from linear conductan
Brazilian Journal of Physics. Publicado em: 2004-06
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4. Estudo de processo de fabricação de diodo Schottky de potencia
This work is a study of fabrication process for power Schottky diode. Aluminum and Tungsten were used as metal Schottky contact. The types of fabricated Schottky diodes were: Convencional Schottky diode, with metal overlap, with p-n guard ring and with pn junction grid. Parameters from IxV and transient curves were extracted to verify the static and dinamic
Publicado em: 2003
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5. Filmes finos de WN e ALN e suas aplicações na fabricação de transitores mesfet
Tungsten Nitride (WN) and Aluminum Nitride (AlN) thin films were deposited by DC sputtering in Nitrogen ambi~nt and characterized in this work. Gallium Arsenide Schottky diodes were used in the characterization of WN films. The diodes were subject to thermal treatments to study the thermal stability of the contacts, as in the fabrication process of MESFET tr
Publicado em: 2000
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6. Deposição e caracterização de filmes finos de We WSi e estudo da estabilidade termica do contato Schottky sobre GaAs
This dissertation presents a study of the physical and electrical characteristics of W and WSi x thin films as a function of the deposition parameters, done RF magnetron sputtering. Thin films of about 200 nm thickness were deposited on GaAs and SiO/2Si substrates. The depositions were done after a base-pressure of about 6.10-7 Torr was achieved. The deposit
Publicado em: 1992