Metal Semiconductor
Mostrando 25-36 de 56 artigos, teses e dissertações.
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25. Fabricação e caracterização de sensor de pixel ativo com tecnologia NMOS de porta metalica / Fabrication and characterization of active pixel sensors using metal gate NMOS technology
Active Pixel Sensors (APS) based on a simple nMOS technology with high aspect ratio may present good sensitivity to photodetection and offer a low cost option for image sensing circuits. This work presents the layout, fabrication and characterization of photodiodes, transistors and APSs built at the Center for Semiconductor Components (CCS). All the process
Publicado em: 2009
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26. ESTUDO DE PRIMEIROS PRINCíPIOS DE DEFEITOS NATIVOS EM MONÓXIDO DE BERÍLIO / FIRST PRINCIPLES STUDY OF NATIVE DEFECTS IN BERYLLIUM MONOXIDE
The present thesis shows a study of native defects (vacancies and antisites) in Beryllium Monoxide (BeO) by means of first principle calculations within Density Functional Theory (DFT). We made use of Local Density Aproximation (LDA) in order to approach correlation and shift term, and ultrasoft pseudopotentials in order to describe the electron-core interac
Publicado em: 2009
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27. Sistemas eletrônicos em duas dimensões : desordem e resposta dinâmica
In disordered systems the pinning strength on the carriers due to impurities or defects is one of the most important mechanisms that produce insulator behavior. A transition to a metal phase should occur if a driving field is applied to the system. In the last three decades, such transition in two-dimensional systems has attracted much attention in light of
Publicado em: 2009
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28. The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range
The current-voltage (I-V) characteristics of metal-insulator-semiconductor (Al/GaN/p-GaAs) Schottky barrier diodes (SBDs) were investigated over a wide temperature range of 80-380 K. By using the thermionic emission (TE) theory, the zero bias barrier height ΦB0 calculated from I-V characteristics was found to increase with increasing temperature as the idea
Brazilian Journal of Physics. Publicado em: 2008-12
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29. Caracterización eléctrica de películas delgadas de Al2O3 depositadas sobre GaAs por la técnica de rocío pirolítico
Electrical characteristics of thin films of aluminum oxide prepared by spray pyrolysis were studied. The films were prepared from solution onto single crystal GaAs (100) substrates at temperatures from 300°C to 600°C. The electrical characteristics of these films as a function of the substrate temperature were determined from the capacitance and current ve
Matéria (Rio de Janeiro). Publicado em: 2008-03
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30. Utilização de filmes de carbono tipo-diamante nitrogenados e fluorados como materiais eletrônicos.
Este trabalho tem por objetivo principal estudar as alterações que possam vir a ocorrer nas propriedades eletrônicas do filme de carbono amorfo hidrogenado (a-C:H), em virtude da incorporação dos aditivos nitrogênio e flúor. A deposição dos filmes a-C:H, a-C:H:N e a-C:H:F que foram estudados neste projeto de doutorado foi realizada através da técn
Publicado em: 2008
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31. Automação do projeto de módulos CMOS analógicos usando associações trapezoidais de transistores / Analog CMOS modules design automation using trapezoidal associations of transistors
A metodologia de projeto semi-customizado usando associações trapezoidais de transistores (TATs) é especialmente viável para o projeto de circuitos integrados mistos analógico- digitais. Vários trabalhos foram desenvolvidos demonstrando exemplos de aplicações que geraram bons resultados utilizando esta metodologia. Entretanto, ficou evidente a falta
Publicado em: 2008
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32. Development of devices based on GaAs substrate with passivation by ECR plasma / Desenvolvimento de dispositivos baseados em substrato de GaAs com passivação por plasma ECR
Este trabalho apresenta um método simples de passivação de superfícies semicondutoras III-V de substratos de arseneto de gálio (GaAs) e de heteroestruturas de fosfeto de gálio-índio sobre arseneto de gálio (InGaP/GaAs), que são utilizados em transist res de efeito de campo, MESFET (Metal-Semiconductor Field Effect Transistor) e MISFET Metal-Insulato
Publicado em: 2007
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33. Studies of the magnetic properties on Mn-doped GaAs and Zn1-xCoxO thin films / Estudos das propriedades magneticas dos filmes finos de GaAs diopado com Mn e de Zn1-xCoxO
Ferromagnetic semiconductors (FM) are compounds of technological interest due to the possibility of combining their charge and spin degrees of freedom when producing electronic devices. In particular, semiconductor thin films doped with transition metal have become focus of intense scientific investigation since ferromagnetism with reasonably high Curie temp
Publicado em: 2007
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34. Processamento de sinais e reconhecimento de padrões de resposta de sensores de gases através da geometria fractal. / Signal processing and pattern recognition of gas sensors response by fractal geometry.
The aim of the present work was to propose methods for signal possessing and pattern, recognition from the signals response of gas sensors using models and techniques from the fractal geometry. The data studied and analyzed were obtained from two kinds of sensors. The first sensor was the tin oxide device, which detection principle is based on the resistivit
Publicado em: 2007
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35. The inductive coupling with On-Chip coils / O acoplamento indutivo com bobinas On-Chip
The quantum Hall effect (QHE) remains the target of an immense research effort twenty six years after its discovery. In fact this phenomenon has been a source of fundamental questions. Among the open problems in the field is the spatial distribution of the electric current in the quantum Hall effect. This question has been in debate since its discovery. Some
Publicado em: 2007
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36. Electronic ceramics based on polycrystalline SnO2, TiO2 and (Sn xTi1-x)O2 solid solution
In the present text we discuss on electronic properties arising from polycrystalline semiconductor ceramics of SnO2, TiO2 and (Sn xTi1-x)O2 solid solution rutile-type structure. This is intended to be a short overview of the most recent papers in this area. One of the most important content discussed in this text is based on sinterability of these polycrysta
Materials Research. Publicado em: 2006-09