Impurity In The Quantum Well
Mostrando 1-12 de 14 artigos, teses e dissertações.
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1. Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico
In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved photoluminescence from GaAs quantum well and contact layers as a function of applied voltage and magnetic _eld parallel to the tunnel cur
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 11/03/2011
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2. Propriedades opticas de nanofios de InP / Optical properties of InP nanowires
Optical properties of InP nanowires grown by Vapor-Liquid-Solid (VLS) method in a Chemical Beam Epitaxy system were investigated by using micro-photoluminescence spectroscopy varying experimental parameters such as excitation power, emitted signal polarization and sample temperature. Due to polytypism (InP in cubic, zincblende (ZB), and hexagonal, wurtzite (
Publicado em: 2009
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3. Hydrogenic impurity in ridge quantum wire
The binding energies as well as wave functions of hydrogenic impurities located in V-groove GaAs/Al xGa1-xAs quantum wires are calculated for different positions of the impurity inside the wires. The variational method is used and the carrier ground states are analytically calculated by an effective potential scheme together with a suitable coordinate transf
Brazilian Journal of Physics. Publicado em: 2006-12
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4. Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects
The hydrostatic-pressure and applied electric field dependencies of the binding energy and the optical-absorption spectra, associated with transitions between the n = 1 valence subband and the donor-impurity band, in symmetrical and asymmetrical GaAs-Ga1-xAl xAs double quantum-well structures are calculated using a variational procedure within the effective-
Brazilian Journal of Physics. Publicado em: 2006-09
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5. Hydrostatic pressure and electric-field effects on the shallow donor impurity states in GaAs-Ga0.7Al0.3As quantum-well wires
Using a variational procedure within the effective-mass approximation, we have made a theoretical study of the effects of hydrostatic pressure and applied electric fields on the binding energy of a shallow-donor impurity in square-transversal section GaAs-Ga0.7Al0.3As quantum-well wires. The electric field is applied in a plane of the transversal section of
Brazilian Journal of Physics. Publicado em: 2006-09
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6. Binding energy and photoionization cross-section in GaAs quantum well-wires and quantum dots: magnetic field and hydrostatic pressure effects
Using a variational procedure for a hydrogenic donor-impurity we have investigated the influence of an axial magnetic field and hydrostatic pressure in the binding energy and the impurity-related photoionization cross-section in 1D and 0D GaAs low dimensional systems. Our results are given as a function of the radius, the impurity position, the polarization
Brazilian Journal of Physics. Publicado em: 2006-06
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7. Magnetopolaron effects on the intradonor 1s-2p+ transition energies in a GaAs - AlGaAs double quantum well
In this work we present a calculation of the intradonor 1s-2p+ transition energies for an impurity donor present in a GaAs-AlGaAs Double Quantum Well structure as a function of an applied external magnetic field. In our calculation the impurity energy levels were obtained from a variational method by choosing a Gaussian trial wave function, and the energy co
Brazilian Journal of Physics. Publicado em: 2006-06
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8. Infinite potential barrier and hydrostatic pressure effects on impurity-related optical absorption spectra in GaAs double quantum wells
Using the effective-mass approximation and the variational method, we have calculated the effects of hydrostatic pressure on the donor- and acceptor-related optical absorption spectra in symmetrical GaAs double quantum well structures. A central finite potential barrier and two infinite external barriers constitute the profile of the potential barrier consid
Brazilian Journal of Physics. Publicado em: 2006-06
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9. Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures
The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hand
Brazilian Journal of Physics. Publicado em: 2006-06
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10. Espectroscopia de tunelamento em sistemas nanoscopicos de transporte balistico
In this work we discuss the ballistic transport properties of non-interacting electrons in confined nanoscopic system, where the sample boundaries and a controllable impurity repulsive, such as the one induced by scanning a Atomic Force Microscope tip or using split gates technique are the only source of electron sacttering. Two quantum scenary are studied:
Publicado em: 2003
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11. Resonant tunneling through donor impurities in double-barrier structures. / Tunelamento ressonante através de impurezas doadoras em estruturas de dupla barreira.
We have investigated resonant tunneling in GaAs/(AlGa)As double barrier structures which have been fabricated into square mesoscopic and macroscopic size mesas (∼ 10μm × 10μm) A δ layer with different concentrations of Silicon donors was incorporated at the centre of the quantum well. The I(V) characteristics show some features below the
Publicado em: 1994
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12. Study of incorporations of donor impurities in III-V semiconductor structures grown by molecular beam epitaxy. / Estudo de incorporações de impurezas doadoras em estruturas semicondutoras III-V crescidas por epitaxia por feixes moleculares.
III-V semiconductor samples were grown using the Molecular beam epitaxy technique, the electrical properties of the GaAs structures planar doped with silicon were investigated as well as the Silicon saturation and diffusion in these samles. The optcal and electrical properties of structures planar doped with Selenium were analyzed using the Capacitance Volta
Publicado em: 1993