Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects

AUTOR(ES)

Morales, A. L., Raigoza, N., Duque, C. A.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-09

RESUMO

The hydrostatic-pressure and applied electric field dependencies of the binding energy and the optical-absorption spectra, associated with transitions between the n = 1 valence subband and the donor-impurity band, in symmetrical and asymmetrical GaAs-Ga1-xAl xAs double quantum-well structures are calculated using a variational procedure within the effective-mass approximation. Results are obtained for different well and barrier widths, shallow-donor impurity positions, hydrostatic pressure, and applied electric field.

Documentos Relacionados

• Hydrostatic pressure and electric-field effects on the shallow donor impurity states in GaAs-Ga0.7Al0.3As quantum-well wires
• Infinite potential barrier and hydrostatic pressure effects on impurity-related optical absorption spectra in GaAs double quantum wells
• Propriedades opticas de excitons e aceitadores de Be confinados em multiplos poços quanticos de GaAs/Ga0.7Al0.3As
• Binding energy and photoionization cross-section in GaAs quantum well-wires and quantum dots: magnetic field and hydrostatic pressure effects
• Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure