Heterojunctions
Mostrando 1-12 de 15 artigos, teses e dissertações.
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1. Co3O4-ZnO P-N Heterostructure Nanomaterials Film and its Enhanced Photoelectric Response to Visible Lights at Near Room Temperature
In this paper, Co3O4-ZnO nanomaterials with Co3O4 doping mass fractions of 0%, 2.13%, 4.13%, and 6.13% were prepared by sol-gel method. In order to explain and confirm the influence of the incorporation of Co3O4 on the surface morphology and gas sensitivity of ZnO at a relatively low gas concentration, additional studies such as XRD, XPS, SEM, EDS and UV-vis
Mat. Res.. Publicado em: 11/04/2019
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2. Structural, Atomic and Electrostatic Force Microscopy Analyses on YBCO/PBCO/LCMO Superlattices
In order to study the influence of the insulator layer thickness in heterojunctions, (YBa2Cu3O7-δ[20nm]/ PrBa2Cu3Oy/La1/3Ca2/3MnO3[20nm])x20 superlattices were prepared by pulsed laser deposition using three PrBa2Cu3Oy layer thicknesses and two different sequences of deposition. Sample characterization showed primitive orthorhombic crystalline arrangement f
Mat. Res.. Publicado em: 03/04/2017
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3. Novel Ag3PO4/CeO2 p-n Hierarchical Heterojunction with Enhanced Photocatalytic Performance
The composite Ag3PO4/CeO2 photocatlyst, a novel p-n type heterojunction, has been successfully fabricated through a facile hydrothermal process combined with a successive in situ precipitation technique. The X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and UV-visible diffuse reflectance
Mat. Res.. Publicado em: 26/04/2016
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4. Espectroscopia de Impedância aplicada em Heterojunções para Células Solares Fotovoltaicas / Espectroscopia de Impedância aplicada em Heterojunções para Células Solares Fotovoltaicas
As propriedades elétricas das heterojunções de Alumínio/Silício-p monocristalino foram estudadas pela técnica de espectroscopia de impedância e análise de capacitância em função do potencial. Estas técnicas não são destrutivas, nem invasivas e conta com elevada precisão. Quando associadas a outras técnicas podem fornecer informações compree
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 29/04/2011
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5. Estudo de materiais, estruturas de dispositivos e fenômenos de transporte em sistemas fotovoltaicos híbridos orgânico-inorgânico / Study of materials, device structures and transport phenomena in hybrid photovoltaic systems
Recently a fast development in organic and hybrid photovoltaic field has been observed. Such devices are fabricated by organic semiconductors within components of a heterojunction, in which bulk heterojunctions obtained via interpenetrating networks at the sub-20-nm length scale. It permits the effective collection of photogenerated charge carriers even with
Publicado em: 2010
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6. Caracterização elétrica de células solares de tripla tecnologia de matérias e sensores / Electrical characterization of triple junction solar cells - GAINP/GAAS/GE
Triple junction solar cells use a combination of semiconductor materials to more efficiently capture photons in the range of 300nm to 1800nm of sun solar spectrum. Minimum average conversion efficiency AM0 for first generation TJ solar cell for space use is 26,0%. The GaInP, GaAs and Ge were select because of their collective ability to match bandgap energie
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 24/03/2006
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7. ProduÃÃo de heterojunÃÃes de polianilina/silÃcio e nanofibras de polianilina para aplicaÃÃes em dispositivos hÃbridos
In this work we develop the methodology for the synthesis and fabrication of Polyaniline (PANI) â Silicon (Si) heterojunctions, with great potential for technological applications as sensors in different areas such as optics, ionizing radiation and gas detection. Besides, we were able to implement the electrospinnin technique with the goal of producing poly
Publicado em: 2006
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8. Estudo de interferência de elétrons em dispositivos mesoscópicos no limite Hall quântico
In this work we introduce the basic concepts required to understand how electronic interferometers work. The interferometers are semiconductor devices based in GaAs/AlGaAs heterojunctions where a high mobility two-dimensional electron gas is formed. The electron gas is confined in a small region of dimension comparable to its Fermi wavelength. In a high magn
Publicado em: 2006
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9. Study of the viability of production of semiconductors devices based on silicon carbide films grown by PECVD. / Estudo da viabilidade de fabricação de dispositivos semicondutores baseados em filmes de carbeto de silício crescidos por PECVD.
In this work we studied the viability to build devices based on stoichiometric amorphous silicon carbide semiconductor films (a-Si0.5C0.5:H), obtained by plasma enhanced chemical vapor deposition technique. The project proposal involves the realization of a series of studies that evaluate the potentialities of the a-SiC:H for the fabrication of simple semico
Publicado em: 2006
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10. Caracterização elétrica de células solares de tripla tecnologia de matérias e sensores / Electrical characterization of triple junction solar cells - GAINP/GAAS/GE
Células solares tripla junção (TJ) utilizam uma combinação de materiais semicondutores para capturar mais eficientemente os fótons na faixa de 300nm a 1800nm do espectro solar. A eficiência mínima de conversão AM0 para uma célula de TJ de primeira geração para uso espacial é de 26%. O GaInP, GaAs e Ge foram escolhidos devido a capacidade coletiv
Publicado em: 2006
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11. Polyaniline-silicon heterojunctions as a sensing device
Anais da Academia Brasileira de Ciências. Publicado em: 2002-09
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12. Crescimento epitaxial de heteroestruturas de poços quanticos por MOCVD
Using optical and electrical characterizations. We investigated the MOCVD growth of GalnP layers and a variety of heterojunctions showing the viability of replacing Ga0.64Al0.36As by GalnP lattice matched to GaAs substrate. The measured electrical characteristics of heterojunctions has shown that it is possible to monitor the reactor growth conditions. The o
Publicado em: 1991