Crescimento epitaxial de heteroestruturas de poços quanticos por MOCVD

AUTOR(ES)
DATA DE PUBLICAÇÃO

1991

RESUMO

Using optical and electrical characterizations. We investigated the MOCVD growth of GalnP layers and a variety of heterojunctions showing the viability of replacing Ga0.64Al0.36As by GalnP lattice matched to GaAs substrate. The measured electrical characteristics of heterojunctions has shown that it is possible to monitor the reactor growth conditions. The optical characterization was used to study quantum wells. we have shown In contamination on the GalnP/GaAs quantum wells and found a selective purge proceeding to eliminate such contamination. In addition, we have shown alloy ordering in GalnP. High-quality GalnP/GaAs has been grown. InP/GaInAsP and GalnP/GaAs high-quality quantum wells have provided significant information about the different behavior of TMln and TEGa in the MOCVD reactor . The GalnP/GaAs/GalnAs lasers electrooptical characteristics have confirmed GalnP as an advantageous material to replace GaAIAs

ASSUNTO(S)

cristalização fisico-quimica compostos organometalicos

ACESSO AO ARTIGO

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