Quantum dots: photodetectors, weak localization and counter-rotating edge states / Pontos-quânticos: fotodetectores, localização-fraca e estados de borda contra-rotativos
AUTOR(ES)
Ivan Ramos Pagnossin
DATA DE PUBLICAÇÃO
2008
RESUMO
In this work we present transport properties of heterostructures with quantum-dots. Three subjects were exploited: on the first one, we observed anomalous quantum Hall plateaus, for wich we attributed to the existence of counter-rotating edge-states; on the second subject, we determined the decoherence time of the bidimensional electron system as a function of the evolutionary stage of nearby self-assembled quantum-dots. We concluded the mechanical stress accumulated during the epitaxial growth "freezes" the electrons, reducing the decoherence rate; finally, we tested some base-heterostructures of infrared photodetectors. We observed the stacking of active-regions can be used as a parameter to control quantum-mobilities and, as a consequence, the operation properties of such detectors.
ASSUNTO(S)
quantum hall effect counter rotating edge states weak localization. quantum dots efeito hall quântico localização-fraca pontos-quânticos fotodetectores photodetectors estados de borda contrarotativos poço-quântico-duplo
Documentos Relacionados
- ELECTRONIC CORRELATION IN QUANTUM DOTS SYSTEMS
- Propriedades eletrÃnicas de pontos quÃnticos contendo muitos elÃtrons.
- "Propriedades de transporte elétrico de gases bidimensionais de elétrons nas proximidades de pontos-quânticos de InAs"
- Pseudopotential Study of CdTe Quantum Dots: Electronic and Optical Properties
- Optical properties of semiconductor type II quantum dots