Projeto de uma tecnologia de fabricação de MESFETs para circuitos integrados em GaAs

AUTOR(ES)
DATA DE PUBLICAÇÃO

1996

RESUMO

This work is a contribution to the development of GaAs MESFETs transistors to use in high speed integrated circuits (CIs). Initially are described the GaAs manufacture processes: monocrystal substrate fabrication, ion implantation, thermal annealing to activate the implanted impurities, contact fabrications. It is developed the mathematical mo deI of the solid state physics used by the PRISM programo The results were first obtained with the SUPREM-IV.GS program that simulate the process and then passed to PRISM program that analyses the electrical behavior of MESFET devices; that procedure was done in an iterative way until the achievement of suitable parameters to the manufacture of both depletions and enhancement transistors to use in digital CIs

ASSUNTO(S)

transistores sistemas eletronicos analogicos semicondutores de arsenieto de galio microeletronica processos de fabricação

ACESSO AO ARTIGO

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