Dispositivos semicondutores de alta velocidade : contribuição ao modelamento e a implantação de tecnologia de MESFETs de GaAs com geometria micron e submicron

AUTOR(ES)
DATA DE PUBLICAÇÃO

1992

RESUMO

this work describes the technology developed for the construction of GaAs MESFET?s (Gallium Arsenide Metal Semiconductor Field Effect Transistors) with micron and submicron gate geometry. It describes in detail all the steps for the construction of these devices and the results obtained. It is shown that GaAs MESPETs, for analogical applacation in the microwave range and with potencial for operation in integrated digital circuits, may be constructed with conventional photolithography and with a self-aligment technique. Transitors were constructed using this technique and the DC and dynamic characteristics are in agreement with the specifications of typical MEFETs devices reported in the literature. A general study is also shown, in tutorial form, of the various technological alternatives for the construction of MESFETs. In addition, an extensive analysis of MESFETs models is also presented indicating their evolution, particulary with respect to the interpretation of of the phenomena associated with the divice. A numerical simulation was also developed for the analysis of the stationary charge domain behavior as a function of gate and drain bias of GaAs MEFETs with a submicron gate, thus allowing the identification of improvements to be introduced in the existing models

ASSUNTO(S)

semicondutores microeletronica engenharia eletrica

ACESSO AO ARTIGO

Documentos Relacionados