Projeto de fabricação de HBTs
AUTOR(ES)
Augusto Cesar Redolfi
DATA DE PUBLICAÇÃO
1999
RESUMO
A process was established for the fabrication in laboratory of Heterojunction Bipolar Transistors (HBTs) with the AIGaAs/GaAs system. The work consisted basically of the study of elementary processing steps. A mask set was designed including devices in different sizes and test structures. With this mask set, the processing steps for HBT fabrication were studied and HBT transistors were obtained. A method to stop wet etching precisely on the base layer was analysed. This method consists of measuring the reverse currente in a diode formed between the surface of the layer being etched and a tungsten probe and allowed precise base layer exposure. The opening of contact vias with precise wall angle control was achieved by tranfering the pattern of a photoresist tilted wall to a polyimide via. Contact metallization strucures based on AuGe for n+ layers and Ti/Pt/ Au for p+ layers, produced by e-beam evaporation followed by an alloy or sinthering cycle was analysed for usage in small geometry devices and contact resistivity as low as 1x ?10 POT. ?6? ?ômega? ?cm POT.2? were achieved for both cases. An empirical model was developed, implemented and tested to simulate the behavior of fabricated devices. This model includes the self-heating effect and is suitable for use with CAD tools. ...Note: The complete abstract is available with the full electronic digital thesis or dissertations
ASSUNTO(S)
circuitos integrados - simulação por computador arsenieto de galio transistores bipolares implantação ionica
ACESSO AO ARTIGO
http://libdigi.unicamp.br/document/?code=vtls000188307Documentos Relacionados
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