Desenvolvimento de uma memória associativa estocástica utilizando transistores mono-elétron / Development of a stochastic associative memory using single-electron transistors.
AUTOR(ES)
Helen Carvalho do Carmo
DATA DE PUBLICAÇÃO
2006
RESUMO
In this study the design of an stochastic associative memory, based upon single-electron transistors, was, for the first time, carried out. An hierarchical design methodology, suitable for single-electron circuit conception was also devised in this work. The associative memory circuit designs performance was validated using professional electrical simulators.
ASSUNTO(S)
redes neurais nanoeletrônica transistor mono-elétron memória associativa(engenharia elétrica) telecomunicacoes
Documentos Relacionados
- Interconnections influince upon nanoelectronic integrated circuits performance based on single-electron transistor
- Room-temperature single-electron junction.
- Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos.
- Memória associativa em redes neurais realimentadas
- Estudo de transistores de tunelamento controlados por efeito de campo.