Tfet
Mostrando 1-3 de 3 artigos, teses e dissertações.
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1. A JL-SDR-IMPATT Device with Improved Efficiency
Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device wo
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2017-04
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2. Estudo de transistores de tunelamento controlados por efeito de campo. / Study of tunnel field effect transistors.
This works presents the study of tunneling field effect transistors, namely TFETs. Analyses were performed based on theoretical explanations, numerical simulations and experimental data in order to show this technology suitability as an alternative for the continuous devices scaling. The basic idea of making use of band-to-band tunneling as the main current
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/03/2012
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3. Hardy-Weinberg Testing for Continuous Data
Estimation of allelic and genotypic distributions for continuous data using kernel density estimation is discussed and illustrated for some variable number of tandem repeat data. These kernel density estimates provide a useful representation of data when only some of the many variants at a locus are present in a sample. Two Hardy-Weinberg test procedures are