Difração multipla de raios-X no estudo de ordenamento em ligas semicondutoras e defeitos em semicondutores implantados

AUTOR(ES)
DATA DE PUBLICAÇÃO

1999

RESUMO

The aim of this work is to develop the X-ray multiple diffraction, as a new technique to characterize semiconductors wafers submitted to ion implantation and, epitaxial layers that presents atomic ordering. The technique was also of great usefulness in the study of the heterostucture lattice coherence. The sensitivity of the Bragg-surface diffraction (BSD) case to the regime of diffraction, dynamical or kinematical, was applied through BSD condition mapping, to analyze the role of dose and energy in the ion implantation process in GaAs lattice, providing information regarding in-plane crystalline perfection, it means, in the parallel direction of the sample surface, through the measurement of the surface lattice coherence length. BSD cases were also chosen as a method for direct observation of atomic ordering in semiconductors, since the strongest BSD peaks are in the [111] direction, reported in the literature, as the atomic ordering directions in III-V epitaxial layers. The asymmetry observed in the peak intensities, regarding the symmetry mirrors are due to the presence of ordered regions in the sample, that were observed for the first time in this work, in samples grown by chemical beam epitaxy (CBE). We have also observed for the first time, the occurrence of coherent hybrid reflect ions in mult iple diffract ion four-beam cases using synchrotron radiat ion Renninger scans to analyze GaInP/GaAs(001) samples. The symmetry break observed in the scans was explained as a consequence of the substrate miscut. The large coherence length of synchrotron radiation was important to these observations, since it has to be preserved along the hybrid path

ASSUNTO(S)

implantação ionica raios x - difração semicondutores

ACESSO AO ARTIGO

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