Crescimento seletivo de diamante assistido a laser : um estudo preliminar

AUTOR(ES)
DATA DE PUBLICAÇÃO

1997

RESUMO

The use of diamond films for semiconductor devices promises a technological advance in Electronic Industry. It?s unique combination of properties which overcome that of those semiconductors used nowadays allows a better integration and seed operation in circuits of this particular material. The subject of our Theses is about the growth of a single-crystal diamond on a non diamond substrate, the most useful form of diamond for the electronic field. Thus, we have proposed a hybrid method using, simultaneously, hot-filament and laser. The role of the hot-filament in to dissociate the inlet gas mixture. As a result, atomic hydrogen and diamond precursors radical, are found. A laser is used to heat the substrate, helping the crystal growth in a temperature limited area. For the proposed method, the laser beam passes though an optical system, focusing the substrate within an area of 5 to 10 microns in diameter, which is similar to a diamond nucleus. The chamber has been developed in order to permit the radiation inlet with no need of a complex optical system. To keep the desire temperature for the crystal growth, at the corresponding area, the sample mount has been made of a good heat conductor which allows a water flow into its interior, taking the heat away. So, it provides a temperature gradient, causing the desired effect ... Note: The complete abstract is available with the full electronic digital thesis or dissertations

ASSUNTO(S)

feixes de laser cristais - crescimento filmes finos de diamantes diamante artificial

ACESSO AO ARTIGO

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