Schottky Contact
Mostrando 1-4 de 4 artigos, teses e dissertações.
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1. CARACTERIZAÇÃO DE NANOFIOS DE GERMÂNIO SINTETIZADOS UTILIZANDO COBRE COMO CATALISADOR
This paper presents reliable synthesis of germanium nanowires by the vapor-liquid-solid method using copper as an alternative catalyst to gold, the most commonly used metal. The morphological study showed long range single-crystalline germanium nanowires with diamond structure and diameters ranging from 20 nm to 80 nm and lengths in tenths of a micrometer
Quím. Nova. Publicado em: 2015-07
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2. Estudo de processo de fabricação de diodo Schottky de potencia
This work is a study of fabrication process for power Schottky diode. Aluminum and Tungsten were used as metal Schottky contact. The types of fabricated Schottky diodes were: Convencional Schottky diode, with metal overlap, with p-n guard ring and with pn junction grid. Parameters from IxV and transient curves were extracted to verify the static and dinamic
Publicado em: 2003
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3. Estudo teórico de característica elétrica de contato schottky não íntimo metal-isolante amorfo e estrutura metal-isolante-metal / Theoric study of electrical of Schottky contact from metal-insulator-metal and metal-amorphous insulators structures
No presente trabalho foi desenvolvida uma teoria de característica elétrica da estrutura metal-isolante-metal considerando uma camada fina de óxido entre o metal e o isolante, sendo o óxido um outro isolante de banda de energia proibida mais larga. Foi considerada uma distribuição energética uniforme de estados de impurezas à interface óxido-isolant
Publicado em: 1989
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4. Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization
UV response of ZnO nanowire nanosensor has been studied under ambient condition. By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced from ∼417 to ∼0.8 s. By further surface functionalization with fu
American Institute of Physics.