Optoelectronics
Mostrando 1-12 de 27 artigos, teses e dissertações.
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1. Supramolecular Approach in Energy Conversion Devices
This review summarizes investigations carried out at the Laboratory of Photochemistry and Energy Conversion (LFCE) in the University of São Paulo dealing with design and characterization of ruthenium(II), rhenium(I) and iridium(III) polypyridine complexes with desired photochemical and photophysical properties in light of the development of optoelectronics
J. Braz. Chem. Soc.. Publicado em: 2020-11
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2. NANOCRISTAIS DE PEROVSKITAS COLOIDAIS: HISTÓRICO, PROPRIEDADES E APLICAÇÕES
Recently, a new class of materials, the Perovskite Nanocrystals, also known as perovskite quantum dots (PQDs) has emerged. Perovskite nanocrystals are promising in optoelectronics due to their quantum confinement properties, narrow photoluminescence bands with short decay times, optically tunable bandgaps, easy surface passivation and high photoluminescent q
Quím. Nova. Publicado em: 2020-09
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3. Caracterización electroquímica de películas de óxido de zinc obtenidas por anodizado en medio alcalino
ABSTRACT Zinc Oxide is a material of particular interest because of its unique optical and electrical properties, which are explored for many applications in optoelectronics and nanoelectronics; and it that can be synthesized economically by the technique of anodization. In this work, the potentiostatic anodization technique was used in dilute NaOH solution,
Matéria (Rio J.). Publicado em: 19/07/2018
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4. Band Structure, Charge Distribution and Optical Properties of AlPxSb1-x Ternary Semiconductor Alloys
The present contribution studies on the composition dependence of the electronic and optical properties of the zinc-blende alloy system AlPxSb1-x. The calculations are performed using a pseudopotential approach under the virtual crystal approximation. Features such as electronic band structure, energy band-gaps, refractive index, dielectric constants and val
Mat. Res.. Publicado em: 21/05/2018
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5. Characterization of Sn Doped ZnS Thin Films Synthesized by CBD
Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Reitveld analysis using MAUD software was use
Mat. Res.. Publicado em: 09/02/2017
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6. Topics in Present-day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors
The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on Thermo-Mechanical Statistics. In electronics and optoelectronics we face situations involving physical-chemical systems far-removed-from equilibrium, where
Mat. Res.. Publicado em: 2015-06
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7. CSA Doped Poly(aniline-co-o-toluidine) and Dispersed Zinc Oxide Nanoparticles: a Promising Material for Photovoltaics
Copolymerization of aniline and o-toluidine is achieved by chemical oxidative polymerization with equal molar ratio of monomers in the presence of hydrochloric acid and ammonium persulphate as an oxidant. The copolymer found to be more soluble in polar solvents such as NMP, DMF and DMSO. FTIR spectroscopy confirms the copolymer chemical structure. UV spectro
Mat. Res.. Publicado em: 2015-06
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8. Indium tin oxide synthesized by a low cost route as SEGFET pH sensor
Polycrystalline ITO films with good optoelectronics characteristics and homogeneous surface has been obtained upon annealing at 550 °C in N² atmosphere using a low-cost chemical vapor deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH,
Mat. Res.. Publicado em: 02/07/2013
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9. Espectroscopia ultrarrápida do polímero semicondutor luminescente MEH-PPV com excitação no ultravioleta / Ultrafast spectroscopy of the luminescent semiconducting polymer MEH-PPV with ultraviolet excitation
The optoelectronics industry is currently undergoing a transition period in which inorganic materials are being replaced by organic materials, oligomers and polymers, in the fabrication of some types of devices. However, factors such as low efficiency and low lifetime prevent polymer based devices on entering the market definitely. The solution of these issu
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 17/08/2012
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10. Degradação de sinais com modulação NRZ-DQPSK e 16-QAM em enlaces ponto a ponto com amplificadores ópticos a semicondutor = : NRZ-DQPSK and 16-QAM signal degradation in fiber links with semiconductor optical amplifiers / NRZ-DQPSK and 16-QAM signal degradation in fiber links with semiconductor optical amplifiers
Modulações ópticas avançadas como DQPSK e QAM tem sido escolhidas por serem formatos multiniveis (dois bits ou mais por símbolo), aumentando a eficiência espectral de sistemas ópticos. Entretanto, o amplificador óptico a semicondutor (SOA) indicado principalmente para aplicações de media distancia (da ordem de 20 km), pode degradar o sinal DQPSK e
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/07/2012
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11. The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview
The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on Thermo-Statistics. We do face situations in electronics and optoelectronics involving physical-chemical systems far-removed-from equilibrium, where ultrafa
Brazilian Journal of Physics. Publicado em: 2010-03
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12. Fabrication and characterization of tellurite and germanate waveguides for optoelectronics applications. / Produção e caracterização de guias de onda de telureto e germanato para aplicações em optoeletrônica.
The objective of this work is the production and characterization of GeO2-PbO and TeO2-ZnO waveguides. The waveguides were produced using thin films and glasses by means of different procedures. The films were produced using the RF magnetron sputtering method and characterized by a variety of techniques. In particular, scanning electron microscopy was essent
Publicado em: 2010