Interface States Density
Mostrando 1-12 de 12 artigos, teses e dissertações.
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1. Caracterização elétrica e físico-química de estruturas dielétrico/4H-SiC obtidas por oxidação térmica
O carbeto de silício (SiC) apresenta várias propriedades extremamente interessantes para a fabricação de dispositivos eletrônicos submetidos a condições extremas como alta temperatura (300 a 600 °C), alta frequência e alta potência. Além disso, é o único semicondutor composto que, reagindo com o oxigênio, forma um óxido isolante estável, o Si
Publicado em: 2010
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2. Molecular dynamics of articaine in POPC membranes / Dinamica molecular de articaina em membranas POPC
We studied the interactions of articaine - a local anesthetic widely used for me- dical and odontological applications - with model membranes of POPC (palmitoyl-oleyl-phosphatidylcholine) at biological relevant conditions. We have employed molecular dynamics technique, which allowed us to investigate the system at molecular level. Firstly, we applied quantum
Publicado em: 2009
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3. Caracterización eléctrica de películas delgadas de Al2O3 depositadas sobre GaAs por la técnica de rocío pirolítico
Electrical characteristics of thin films of aluminum oxide prepared by spray pyrolysis were studied. The films were prepared from solution onto single crystal GaAs (100) substrates at temperatures from 300°C to 600°C. The electrical characteristics of these films as a function of the substrate temperature were determined from the capacitance and current ve
Matéria (Rio de Janeiro). Publicado em: 2008-03
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4. Propriedades ópticas anômalas de poços e fios quânticos de InGaAs/InP vicinais
The dynamic and the lateral transport of carriers in quantum wells and quantum wires of InGaAs grown on vicinal InP substrates were investigated by spectrally and spatially resolved photoluminescence techniques. Simulation of the results of spectrally integrated photoluminescence using rate equations showed that the carrier capture and lifetime of the confin
Publicado em: 2007
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5. Electronic states in carbon nanotube quantum-dots
We present a theoretical study on local electronic properties of quantum-dot nanotubes formed by connecting pure semiconducting and metallic nanotubes via appropriate junctions. The junctions are formed by introducing pair-defects composed by heptagon and pentagon along the axial direction of pure nanotubes. We investigate the dependence of the confined elec
Brazilian Journal of Physics. Publicado em: 2002-06
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6. Estudo dos estados eletrônicos em sistemas quase-unidimensionais. / Study of electronic states in quasi-one-dimensional systems.
We have studied the electronic properties of two different quasi-one-dimensional systems solving self-consistently the Schrödinger and Poisson equation. The method we use to calculate the electronic levels is based on the solution of the time-dependent Schrödinger equation using the split-operator technique. In the first system we have studied, we present
Publicado em: 1997
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7. Propriedades estruturais, densidade de deslocações e analise de defeitos superficiais em heteroestruturas semicondutoras por difração multipla de raios-x
In this work. the potential of the X-Ray Multiple Diffraction (MD) technique in studying the heterostructures and semiconductor substrates is investigated. The three-beam (incident, primary and secondary) MD with the secondary parallel to the surface. is the main tool for this investigation. The occurrence of the two types of hybrid reflections in heterostru
Publicado em: 1994
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8. Experimental determination of radiation dose distribution in an heterogeneous medium, irradiated with clinical beams of x and gamma rays. / Estados de impureza em poços quânticos de GaAs-Ga1-xAlxAs
The mass-effective equation is used in order to calculate the intra and inter-subband transition energies in the Quantum Wett structures. The electronic screening of the shallow donor impurity is inclued in the RPR method and the energies are found through variational formalism. The binding energies are calcutated as function of the electronic density and im
Publicado em: 1989
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9. Estados eletronicos de superficie e interfaces em semicondutores : Si-Sno2
We develop a technique to calculate the density of state of surfaces and interfaces. The method used here is the tight-binding Hamiltonian based on the Slater-Koster approach. The Green functions, which arise from the formalism of the scattering theory, are decoupled through the renormalization s procedure. We study the ideal surface (100) of Si and SnO2, an
Publicado em: 1984
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10. Measures of residue density in protein structures
A hierarchy of residue density assessments and packing properties in protein structures are contrasted, including a regular density, a variety of charge densities, a hydrophobic density, a polar density, and an aromatic density. These densities are investigated by alternative distance measures and also at the interface of multiunit structures. Amino acids ar
The National Academy of Sciences.
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11. Application of the Wang–Landau algorithm to the dimerization of glycophorin A
A two-step Monte Carlo procedure is developed to investigate the dimerization process of the homodimer glycophorin A. In the first step, the energy density of states of the system is estimated by the Wang–Landau algorithm. In the second step, a production run is performed during which various energetical and structural observables are sampled to provide in
American Institute of Physics.
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12. Properties of water along the liquid-vapor coexistence curve via molecular dynamics simulations using the polarizable TIP4P-QDP-LJ water model
We present an extension of the TIP4P-QDP model, TIP4P-QDP-LJ, that is designed to couple changes in repulsive and dispersive nonbond interactions to changes in polarizability. Polarizability is intimately related to the dispersion component of classical force field models of interactions, and we explore the effect of incorporating this connection explicitly
American Institute of Physics.