Field Effect Transistors
Mostrando 1-12 de 22 artigos, teses e dissertações.
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1. Characterization of the Ge/Bi2O3 Interfaces
In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2
Mat. Res.. Publicado em: 04/04/2019
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2. Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors
We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (µFET) of 0.18 cm2V-1s-1.
Mat. Res.. Publicado em: 19/09/2016
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3. Effects of Measurements Conditions on an Extended-Gate FET used as pH sensor
Fluorine-doped tin oxide (SnO2:F) was investigate as the sensitive part of a pH sensor in the extended-gate field effect transistors (EGFET) device, which provided a linear response for pH range from 2 to 12; the sensitivity was 37 mV.pH-1 for experiments performed in absence of light. Neutral pH, leads to a transistor’s electric current remained practical
Mat. Res.. Publicado em: 05/02/2016
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4. Fabricação e estudo das propriedades de transporte de transistores de filmes finos orgânicos / Manufacturing and study of charge transport properties of organic thin film transistors
A eletrônica digital desempenha papel essencial no desenvolvimento e manutenção dos padrões de vida em prática hoje no mundo. A peça fundamental para a criação desta era tecnológica é sem dúvidas o transistor. Com o advento de novos materiais, a busca por transistores que oferecem novas oportunidades de processamento e aplicação permitiu que uma
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/10/2012
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5. Aplicação de novos materiais em transistores de efeito de campo ferroelétricos
In this work, we investigated the electrical properties of the polyelectrolyte PSS in its sodium form (PSS-Na, Polystyrene sulfonic in the sodium form) and acid form (PSS-H, polystyrene sulfonic in the acid form) and also doped with Fe3+ for application in Ferroelectric Field Effect Transistors (Fe-FET). The PSS-Na was acquired from Aldrich and PSS-H was obt
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/07/2012
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6. Desenvolvimento de materiais e métodos de fabricação de sensores químicos/bioquímicos baseados em silício e nanoestruturas de carbono (ISFET, CNTFET e GraFET) : Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET) / Development of materials and methods of fabrication of chemical/biochemical sensors based on silicon and carbon nanostructures (ISFET, CNTFET and GraFET)
Este trabalho teve como objetivo o desenvolvimento de materiais e métodos avançados de fabricação de sensores químicos/bioquímicos. Utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da UNICAMP, foram desenvolvidos e caracterizados filmes finos de alta constante dielétrica e filmes metálicos. Os materiais desenvolvidos foram
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 20/07/2012
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7. Estudo de transistores de tunelamento controlados por efeito de campo. / Study of tunnel field effect transistors.
This works presents the study of tunneling field effect transistors, namely TFETs. Analyses were performed based on theoretical explanations, numerical simulations and experimental data in order to show this technology suitability as an alternative for the continuous devices scaling. The basic idea of making use of band-to-band tunneling as the main current
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 26/03/2012
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8. Sensores e biossensores baseados em transistores de efeito de campo utilizando filmes automontados nanoestruturados / Sensors and biosensors based on field-effect transistors using nanostructured self-assembled films
Separative extended gate field-effect transistor (SEGFET) device is an alternative to the conventional ion-sensitive field-effect transistor (ISFET). The great advantage of SEGFET refers to its easy processing, i.e., it is limited under only manipulation of the gate electrode, avoiding the conventional microelectronic processes. In this way, ion sensors and
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 21/11/2011
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9. Desenvolvimento de sistemas e medida de ruído de alta e baixa frequência em dispositivos semicondutores / System for high and low frequency noise measurements design and semiconductor devices characterization
Este trabalho teve como objetivo a montagem de um sistema de caracterização de ruído de alta e de baixa freqüência, utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da Unicamp. Foi montado um sistema para a caracterização do ruído de baixa freqüência em dispositivos semicondutores e desenvolveu-se um método para a anál
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 24/02/2010
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10. Desenvolvimento de uma metodologia de fabricação de transistores de filmes finos orgânicos. / Development of a manufacturing methodology for organic thin film transistors.
In this work, it is presented a methodology for organic thin-film transistor (OTFT) fabrication. Poly(3-hexylthyophene) (P3HT):[6,6]-phenyl-C61-butyric acidmethyl ester (PCBM) bulk heterojunction solar cells were studied for their maximum power conversion efficiency (PCE) around 5 %. Efficiencies evolution in time from 10-6 to 1.7 % show the difficulties inv
Publicado em: 2010
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11. Potential performance of SiC and GaN based metal semiconductor field effect transistors
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible. Simulations of SiC MESFETs of lengths 2, 2.6 and 3.2 µm have been carried out and compared t
Brazilian Journal of Physics. Publicado em: 2009-03
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12. Tin and zinc oxides semiconductor devices / Dispositivos semicondutores a partir de óxidos de estanho e zinco
This work presents the study and development of semiconductor devices base on tin and zinc oxides. The first device is related to the development of pH sensors based on field effect, while the second device uses surface acoustic waves for the transport of carriers related to a single photon detector device. Initially, the semiconductors were used as hydrogen
Publicado em: 2009