Dielectric Devices
Mostrando 1-12 de 38 artigos, teses e dissertações.
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1. Wavelength-Selective Near Unity Absorber Based on Fabry-Pérot Nanoresonators
Abstract We proposed and analyzed a planar narrow-band absorber based on a bi-layer metal/dielectric structure. The planar absorber uses the Fabry-Pérot resonance and the inherent loss of the metals, for maximum light absorption in the range of the electromagnetic spectrum visible to the near infrared. The absorption resonance peak can be shifted to other r
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2021-06
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2. An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications
Abstract This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of th
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2019-03
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3. DEVELOPMENT OF INSULATING MAGNETIC OIL FOR TRANSFORMERS
The Centrais Elétricas do Norte do Brasil AS – Eletronorte, as well as other companies in the world energy sector, have problems of loss of the performance by excessive heat and even accidents with their transformers. The maintenance and accidents impact of energy supply, generating profit and more expensive insurance premiums. The transformers are essent
Publicado em: 20/07/2014
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4. Preparation and characterization of PbTi0(3) ceramics modified by a natural mixture of rare earth oxides of xenotime
Lead titanate ceramics modified by xenotime (Xm) with nominal composition (Pb, Xm)TiO3, Xm 10 or 15 mol %, were prepared by the conventional oxide mixture technique. Xenotime is a natural mineral consisting of a mixture of rare earth oxides. Thermal, structural and electric properties were investigated through differential and gravimetric thermal analysis, X
Mat. Res.. Publicado em: 23/08/2013
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5. ObtenÃÃo das cerÃmicas dielÃtricas BiTRWO6 (TR = Y, Gd ou Nd) por radiaÃÃo de micro-ondas e sua aplicaÃÃo em dispositivos eletrÃnicos / Obtaining Of Ceramic Dielectric BiTRWO6 (Tr = Y, Gd Or Nd) By Microwave Radiation And Its Application In Electronic Devices
The mixture heat of the metal oxides may promote the formation of ceramic materials, depending on their dielectric properties and its crystalline structure may be used with electronic components for a variety of functions in electrical circuits. Heating method is directly related to the material properties. This work aims to use a commercial microwave oven m
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 20/08/2012
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6. Aplicação de novos materiais em transistores de efeito de campo ferroelétricos
In this work, we investigated the electrical properties of the polyelectrolyte PSS in its sodium form (PSS-Na, Polystyrene sulfonic in the sodium form) and acid form (PSS-H, polystyrene sulfonic in the acid form) and also doped with Fe3+ for application in Ferroelectric Field Effect Transistors (Fe-FET). The PSS-Na was acquired from Aldrich and PSS-H was obt
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/07/2012
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7. Effect of parametric uncertainties on the performance of a piezoelectric energy harvesting device
The use of piezoelectric materials for the development of electromechanical devices for the harvesting or scavenging of ambient vibrations has been extensively studied over the last decade. The energy conversion from mechanical (vibratory) to electrical energy is provided by the electromechanical coupling between mechanical strains/stresses and electric char
J. Braz. Soc. Mech. Sci. & Eng.. Publicado em: 2012
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8. Estudo teórico e experimental de guias PBG na faixa de micro-ondas / Theoretical and experimental study of PBG guides in microwave frequencies
Este trabalho apresenta o estudo, o projeto e a caracterização de estruturas de cristal fotônico bidimensionais na faixa de micro-ondas para arranjos cilíndricos dielétricos em simetria triangular e quadrada, com e sem curvas, na faixa de 2 a 4 GHz. A escolha dos arranjos foi feita baseando-se no cálculo do diagrama de bandas e dos modos guiados no cri
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 29/07/2011
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9. Desenvolvimento de processos de eletrodos de porta (TaN e TiN) para dispositivos MOS / Process development of gate electrodes (TiN and TaN) for MOS devices
Tantalum nitride (TaN) and titanium nitride (TiN) films have been obtained by DC sputtering, using different nitrogen flow (10 - 80 sccm) and power (500 - 1500 W), in a nitrogen (N2)/argon (Ar) ambient on Si (100) substrates. The N2/Ar ratio in gas mixture and power effects on structural and electrical properties of TaN and TiN films were investigated by sca
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 01/07/2011
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10. Estudo de viabilidade de integração de micro-lâmpadas incandescentes com filtros interferenciais. / Study of viability of integration of incandescent micro-lamps with interferometric filters.
In the present work was realized a study of the viability of integrating two optical devices: incandescent micro-lamps and interferometric filters with the intention of obtaining a single device with specific characteristics. The fabrication of these optical devices was made using dielectric materials, obtained by plasma-enhanced chemical vapor deposition (P
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/04/2011
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11. Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial Si deposition followed by selective oxidation and leads to one of the highest peak hole mobilities reported for unstrained surface chann
Publicado em: 2011
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12. Estudo das ressonâncias de plasmon em filmes silicatos com nanopartículas de Ag interagentes
In this work, the behavior of surface plasmon resonance from layers of silver nanoparticles embedded in silicon dioxide or on surfaces of silicon dioxide was studied. Structural properties of the produced films were characterized by transmission electron microscopy, while the optical properties were studied with a spectrophotometer. Results showed average na
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 2011