Transientes ultra-rapidos de transporte em plasmas semicondutores submetidos a campos eletricos intensos

AUTOR(ES)
DATA DE PUBLICAÇÃO

1988

RESUMO

Using a Nonlinear Transport Theory derived from the nonequilibrium statistical operator in Zubarev s approach, the equations that govern the evolution of the nonequilibrium state of a highly photoexcited direct-gap polar semiconductor submitted to high electric DC fields is obtained. It is demonstrated the possibility of the existence of three differentiated types of behaviour of the ultrafast mobility transient: (i) structure (i.e. existence of maxima and minima) without overshoot at low fields, (ii) structure with overshoot at intermediate fields, (iii) normal evolution (no structure) at high fields. A criterion for the occurrence of this structured ultrafast mobility transient is established, and numerical calculations appropriated for carriers transport in the central valley of GaAs are performed, showing conditions for its realization

ASSUNTO(S)

transistores (eletricidade) campos eletricos semicondutores

ACESSO AO ARTIGO

Documentos Relacionados