Sensor Hall de GaAs por implantação de ions

AUTOR(ES)
DATA DE PUBLICAÇÃO

2000

RESUMO

In this work we designed, fabricated and characterized Hall-effect magnetic sensors. We studied the involved physical principies and figures of merit of sensors (Hali voltage, Sensitivity, Offset voltage, Linearity, Noise and Temperature coefficient) and, then, we designed Hall sensors of different shapes, obtaining devices with different sensitivities. We fabricated these devices in active layers of different thicknesses and doping levels with the objective to study the effect of these variables on the sensitivity and linearity of the devices. The developed process is compatible with the fabrication process of MESFET transistors. After the design of the sensorsand the process,we fabricateda set of 5 levels of masks through an electron-beam equipment. The active layers have been obtained by two different techniques: ion implantation and epitaxial growth. The implanted active regions have been doped with ions of ?SI POT. + SOB. 29? and the doped epitaxial layer with silicon, so that the concentration of carriers in the layer was of the order of 1,0 x ?10 POT. 17??CM POT. 3? and the thickness between 0.2 - 0.5 ?MU?m.After the packaging of the devices, we characterized the sensors with current bias of 1 - 7 mA and magnetic induction between O - 1.2 T (tesla).The fabricated Hall sensors presented high sensitivity (88 - 820 V/A.T), low offset voltage and high linearity. Based on the results, some additional studies on improvements on the fabrication process and the signal conditioning circuits are suggested. ...Note: The complete abstract is available with the full electronic digital thesis or dissertations

ASSUNTO(S)

implantação ionica arsenieto de galio dispositivos magneticos detectores

ACESSO AO ARTIGO

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