RBS-study of Ge xSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers
AUTOR(ES)
Ramírez, A., Zehe, A., Thomas, A.
FONTE
Materials Research
DATA DE PUBLICAÇÃO
2002-06
RESUMO
Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111) wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose was varied between 10(14) and 10(17) atoms cm-2. Rutherford backscattering (RBS) and channeling analysis was applied in order to explore the formation of a single crystalline Si-Ge compound layer, both prior and after the thermal treatment. The depth and the thickness of the implanted layer, as well as their molar composition and crystalline quality was determined, and it was found that a single crystalline Si-Ge alloy layer was created, with both depth and mole fraction depending on the ion energy and the ion dose.
Documentos Relacionados
- Cálculos AB initio de propriedades estruturais, eletrônicas e ópticas de colmpostos CaXo3 (X=Si, Ge, Sn)
- Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
- Estudo de propriedades estruturais, magneticas e magnetocaloricas de compostos a base de Gd, Ge e Si
- Removal of BTX Compounds in air by total catalytic oxidation promoted by catalysts based on SiO2(1-x)Cu x
- Ressonancia magnetica eletronica em materiais heterogeneous : Gd5(SixGe1-x)4, Co-SiO2 e Co-Cu