RBS-study of Ge xSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers

Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111) wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose was varied between 10(14) and 10(17) atoms cm-2. Rutherford backscattering (RBS) and channeling analysis was applied in order to explore the formation of a single crystalline Si-Ge compound layer, both prior and after the thermal treatment. The depth and the thickness of the implanted layer, as well...