"Películas Espessas de Carbeto de Silício, SiC, sobre Mulita" / Silicon carbide, SiC, thick films over mullite.

AUTOR(ES)

Inacio Regiani

DATA DE PUBLICAÇÃO

2001

RESUMO

Crystalline silicon carbide, SiC, films were deposited on mullite by atmospheric pressure chemical vapor deposition (CVD) method. The characteristic of substrate surface determinate if the film will be dense or porous, while the deposition temperature defines its crystalinity and nucleation rate in film formation. During the mullite substrate preparation process for film deposition, it was observed a whisker formation phenomenon when the piece was doped with 3%mol of rare earth. The growth phenomenon of these whiskers was studied systematically to its characterization and comprehension of its formation mechanism. The addiction of rare earth promote a reduction in mullitization temperature and the formation of whiskers with a composition that alumina / silica ration was 1.3, one of the lowest one ever observed.

ASSUNTO(S)

chemical vapor deposition (cvd) rare earth sic terras raras whiskers deposição química por vapor (cvd) whiskers sic mulita mullite

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