Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

AUTOR(ES)

Amato, M. A.

FONTE

Revista Brasileira de Ensino de Física

DATA DE PUBLICAÇÃO

2002

RESUMO

It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.

Documentos Relacionados

• Extracerebral absorption of near infrared light influences the detection of increased cerebral oxygenation monitored by near infrared spectroscopy.
• Is blindsight like normal, near-threshold vision?
• Exact photocount statistics : lasers near threshold
• Magnetic field induced absorption in Pb xEu1-xTe magnetic semiconductors
• Preferential light absorption in atheromas in vitro. Implications for laser angioplasty.