Magnetic field induced absorption in Pb xEu1-xTe magnetic semiconductors

AUTOR(ES)

Hanamoto, L. K., Henriques, A. B., Rappl, P. H. de Oliveira, Oliveira, N. F., Ueta, A. Y., Abramof, E.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2004-06

RESUMO

We report an investigation of the optical absorption spectrum, using non-polarized light, in Pb xEu1-xTe, x=0 and x=0.095, epitaxial thick layers grown by molecular beam epitaxy (MBE). The absorption edge is described by a broad band, due to the electronic transitions from the 4f7 of Eu2+ to the states in 4f6 5d configuration, as seen previously in bulk Eu chalcogenides. When a magnetic field is applied, a narrow absorption band (full width ~50 meV) emerges from the broad one. The energy of this absorption peak red shifts when the magnetic field increases, and reaches saturation when the Eu2+ attain ferromagnetic arrangement. This behaviour can be described by a localized excitation model with d - f exchange interaction.

Documentos Relacionados

• MBE growth and characterization of Sn1-xEu xTe
• Propriedades Magneto-Ópticas do Pb(x)Eu(1-X)Te COM 0 ≤ x ≤ 0.2
• Propriedades Magneto-Ópticas do Pb(x)Eu(1-X)Te COM 0 ≤ x ≤ 0.2
• Stark effect in CdTe/Cd1-xMn xTe strained double quantum wells
• Zeeman effect in Cd1-xMn xTe parabolic and half-parabolic quantum wells