Interações eletronicas em semicondutores normais e em plasmas, quando sob a ação de campos eletromagneticos

AUTOR(ES)
DATA DE PUBLICAÇÃO

1980

RESUMO

The effect of external fields on the behavior of electron interactions in both a solid state and a gaseous plasma has been considered. The external fields consisted of strong electromagnetic waves by themselves or in association with a d.c. magnetic field. As to the interactions in a gaseous plasma the plasma heating by inverse bremsstrahlung ( IB ) was studied with the plasma irradiated with strong laser fields. It was shown that due to modifications introduced by two e.m. fields on the coulomb screening in the plasma the IB may turn out to be the main heating mechanism dominating over the heating by collective instabilities. This happens when the beating frequency w of the two lasers matches the plasma frequency wp. The additional influence of a d.c. magnetic p field preserves these characteristics of the IB heating for w = wp but renders the process essentially inoperant when the laser ciclotron resonanceobtains in the magnetoplasm. In regard of the effects upon a semiconductor plasma the problem of phonon amplification under the action of two laser fields wes considered. The conditions for the process to occur have been established and we have demonstrated the feasebility of phonon amplification within a narrow band of phonon frequencies. A typical calculation was worked out for an InSb sample under the simultaneous action of both a weak CO2 laser and a strong ICN laser

ASSUNTO(S)

campos eletromagneticos interações eletronicas semicondutores - propriedades fisicas

ACESSO AO ARTIGO

Documentos Relacionados