Fabricação e caracterização de sensor de pixel ativo com tecnologia NMOS de porta metalica / Fabrication and characterization of active pixel sensors using metal gate NMOS technology

AUTOR(ES)

Andre Santos de Oliveira Furtado

DATA DE PUBLICAÇÃO

2009

RESUMO

Active Pixel Sensors (APS) based on a simple nMOS technology with high aspect ratio may present good sensitivity to photodetection and offer a low cost option for image sensing circuits. This work presents the layout, fabrication and characterization of photodiodes, transistors and APSs built at the Center for Semiconductor Components (CCS). All the process stages took place in CCS, including the manufacturing of the lithography masks through an optical process. The technology used was an nMOS, 5[j,m, metal gate, with a single metal layer for interconnections and only four lithography levels. The devices presented satisfactory results, compatible to the behavior predicted by SPICE simulations, suggesting a good performance in application specific circuits, such as optical position sensitive detectors and wavefront sensors, and in several fields, such as astronomy, ophthalmology and atomic force microscopy (AFM)

ASSUNTO(S)

optical detectors semiconductors sensors detectores oticos semicondutores sensores

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