Estudo da dinamica de crescimento de filmes de InP homoepitaxiais : analise das caracteristicas fractais

AUTOR(ES)
DATA DE PUBLICAÇÃO

2000

RESUMO

In this work we study the growth dynamics of homoepitaxial InP(100) fi1ms obtained by Chemical Beam Epitaxy (CBE) and its dependence on temperature and type of substrate used. The topography of the samples was measured by Atomic Force Microscopy and analyzed using fractal and scaling concepts. Our experimental results show that, for the growth temperature range used in the CBE technique, the surface morphology of InP films can vary from three-dimensional (3D) to two-dimensional (2D), with an intermediate 3D structure elongated along particular directions. This structure is formed only for a particular set of growth conditions (precursor flows and temperature); its characteristics depend on the type of substrate used for growth. We also report here the several stages observed in the evolution of the InP surface morphology during CBE growth. Using Continuum Theory, we considered the critical exponents observed experimentally to propose an equation that qualitatively describes the growth dynamics of InP films. This equation includes deposition and surface diffusion with a spatial bias as the most relevant microscopic processes during InP growth

ASSUNTO(S)

filmes finos - superficies epitaxia filmes semicondutores fosfeto de indio

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