Deposition of SiOx thin films on Y-TZP by reactive magnetron sputtering: influence of plasma parameters on the adhesion properties between Y-TZP and resin cement for application in dental prosthesis

AUTOR(ES)

Queiroz, José Renato Calvacanti de, Duarte, Diego Alexandre, Souza, Rodrigo Othávio de Assunção e, Fissmer, Sara Fernanda, Massi, Marcos, Bottino, Marco Antonio

FONTE

Materials Research

DATA DE PUBLICAÇÃO

27/05/2011

RESUMO

In this paper SiOx thin films were deposited on Y-TZP ceramics by reactive magnetron sputtering technique in order to improve the adhesion properties between Y-TZP and resin cement for applications in dental prosthesis. For fixed cathode voltage, target current, working pressure and target-to-substrate distance, SiOx thin films were deposited at different oxygen concentrations in the Ar+O2 plasma forming gas. After deposition processes, SiOx thin films were characterized by profilometry, energy dispersive spectroscopy (EDS), optical microscopy and scanning electron microscopy (SEM). Adhesion properties between Y-TZP and resin cement were evaluated by shear testing. Results indicate that films deposited at 20%O2 increased the bond strength to (32.8 ± 5.4) MPa. This value has not been achieved by traditional methods.

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