Contribuição para a sintese de diamante com dopagens de boro, nitrogenio ou enxofre / Study of diamond doping with boron, sulphur and nitrogen

AUTOR(ES)
DATA DE PUBLICAÇÃO

2004

RESUMO

We studied the diamond doping processes with introduction of doping impurities during the diamond growth in the chemical vapor deposition (CVD) technique, using a hot-filament reactor. Our research focused the use of boron, nitrogen or sulphur atoms in order to obtain diamond films with semiconductor properties of electronic (n-type) or hole (p-type) current transport mechanisms. Trimethyl-borane (B(CH3)3), or ammonia, or carbon disulphide (CS2), mixed with methane and hydrogen were used in the feed gas mixture. The diamond samples were characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Proton-induced X-ray emission (PIXE) and Hall effect. p-type and n-type diamonds have been obtained with boron and sulphur doping, respectively. However, the nitrogen doped samples do not presented semiconductor properties

ASSUNTO(S)

diamante artificial semicondutores - dopagem diamond doping diamond semiconductor properties sulphur doping filmes finos - propriedades eletricas nitrogen doping filmes finos de diamantes cvd diamond boron doping

ACESSO AO ARTIGO

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