Band gap variation of CdS thin films / Variação da energia do gap em filmes finos de CdS

AUTOR(ES)

Luiz Carlos Cunha Carneiro

DATA DE PUBLICAÇÃO

1996

RESUMO

Cadmium sulphide have much technological attraction for their application on heterojunction optoelectronic devices, particularly solar cells. In this work we study thin films ofthis material, prepared by chemical bath deposition (CBD) process. Morphologic, structural and stoichiometric data are correlated to the optical properties, namely the energy gap (Eg). Scanning Electron Microscopy and Transmission Electron Diffraction showed that the whole film is composed as thin amorphous layer preceding a thick polycrystalline phase. Transmitance and refletance measurements carried out on specimens in the 0,4 - 2,4 um thickness range showed a variation in Eg (about 200 meV) which can be understood in terms of the other above mentioned properties (surface morphology, stoichiometry and this relative proportion of the amorphous to the crystalline phase)

ASSUNTO(S)

chemical processes processos quimicos semicondutores semiconductors thin films filmes finos - propriedades oticas

Documentos Relacionados

• ObtenÃÃo e AnÃlise de Filmes Finos de CdS e TiO2 Para Uso em CÃlulas Solares Fotovoltaicas
• Preparação e caracterização de filmes finos de CdS para aplicações fotovoltaicas
• Filmes finos de compostos semicondutores: preparação de CdS e da junção Cu2-XSe/MEH-PPV
• A new route for preparing CdS thin films by chemical bath deposition using EDTA as ligand
• Minimizing the stroin energy of thin films on thick substrates