Analysis of thin bifacial silicon solar cells with locally diffused and selective back surface field

AUTOR(ES)

Moehlecke, Adriano, Osório, Vanessa da Conceição, Zanesco, Izete

FONTE

Mat. Res.

DATA DE PUBLICAÇÃO

09/09/2014

RESUMO

The aim of this work is to present the development and comparison of thin n+pp+ industrial bifacial silicon solar cells produced with the local screen-printed Al back surface field (BSF) to those with the selective BSF doped with aluminum-boron. To produce solar cells with selective BSF, the boron diffusion based on spin-on dopant was introduced in the process sequence. The thin SiO2 layer (10 nm) thermally grown did not produce good passivation on the rear face and wafers were contaminated during aluminum diffusion in the belt furnace. The implementation of selectively doped BSF improved the efficiency by reflecting minority charge carriers and the wafer contamination by belt furnace was compensated by boron diffusion. The bifacial solar cells with B-Al selective BSF achieved an efficiency of 13.7% / 8.9% (front / rear illumination) and presented lower sensitivity to the belt furnace processing and to the quality of the rear surface passivation.

Documentos Relacionados

• Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
• Development of silicon solar cells and photovoltaic modules in Brazil: analysis of a pilot production
• Studies of phosphorus Gaussian profile emitter silicon solar cells
• Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon
• Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon